CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy

Engineering & Materials Science

• Atomic force microscopy 42%
• Buffer layers 23%
• Crystalline materials 34%
• Electron diffraction 44%
• Epitaxial films 75%
• Full width at half maximum 24%
• Molecular beam epitaxy 77%
• Reflection high energy electron diffraction 68%
• Substrates 23%
• Surface morphology 18%
• Surface roughness 13%
• X ray diffraction 16%
• X rays 30%

Chemical Compounds

• Atomic Force Microscopy 39%
• Buffer Solution 16%
• Crystal Structure 12%
• Electron Diffraction 50%
• Epitaxial Film 71%
• Homogeneity 22%
• Metalorganic Molecular Beam Epitaxy 100%
• Reflection 19%
• Reflection High Energy Electron Diffraction 80%
• Surface 15%
• X-Ray 30%
• X-Ray Diffraction 12%

Physics & Astronomy

• atomic force microscopy 12%
• buffers 7%
• curves 9%
• diffraction 4%
• electron diffraction 28%
• flat surfaces 7%
• high energy electrons 16%
• homogeneity 7%
• molecular beam epitaxy 42%
• roughness 6%
• x rays 11%
• zincblende 10%