CeO2 quantum dot functionalized ZnO nanorods photoanode for DSSC applications

Prabhakar Rai; Rizwan Khan; Kyeong Jun Ko; Jong Heun Lee; Yeon Tae Yu

doi:10.1007/s10854-014-1954-7

CeO₂ quantum dot functionalized ZnO nanorods photoanode for DSSC applications

Prabhakar Rai, Rizwan Khan, Kyeong Jun Ko, Jong Heun Lee, Yeon Tae Yu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Cerium oxide quantum dots (CeO₂ QDs) decorated zinc oxide nanorods (ZnO NRs) heterostructures were grown by a combination of solvothermal and chemical bath deposition methods and used for dye sensitized solar cell (DSSC) applications. Transmission electron microscope images showed the formation of CeO₂/ZnO NRs, where ~5 nm CeO₂ QDs were decorated on ZnO NRs having 1-2.5 μm length and 100-150 nm width. Photoluminescence spectra showed the significant increase in UV emission after decoration of ZnO NRs with CeO₂ QDs. DSSC results revealed that the ZnO NRs with CeO₂ QDs leads to an increase in the open circuit voltage and fill factor and exhibited a maximum efficiency of 2.65 %, which was 2.01 times higher than that of unmodified ZnO NRs. The decoration of CeO ₂ QDs on the ZnO NRs surface may lead to the formation of barrier layer and hindered the back electron transfer and thereby high light harvesting efficiency.

Original language	English
Pages (from-to)	2872-2877
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	7
DOIs	https://doi.org/10.1007/s10854-014-1954-7
Publication status	Published - 2014 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{92a91f19de6d41ec90728c1b304f3725,

title = "CeO2 quantum dot functionalized ZnO nanorods photoanode for DSSC applications",

abstract = "Cerium oxide quantum dots (CeO2 QDs) decorated zinc oxide nanorods (ZnO NRs) heterostructures were grown by a combination of solvothermal and chemical bath deposition methods and used for dye sensitized solar cell (DSSC) applications. Transmission electron microscope images showed the formation of CeO2/ZnO NRs, where ~5 nm CeO2 QDs were decorated on ZnO NRs having 1-2.5 μm length and 100-150 nm width. Photoluminescence spectra showed the significant increase in UV emission after decoration of ZnO NRs with CeO2 QDs. DSSC results revealed that the ZnO NRs with CeO2 QDs leads to an increase in the open circuit voltage and fill factor and exhibited a maximum efficiency of 2.65 %, which was 2.01 times higher than that of unmodified ZnO NRs. The decoration of CeO 2 QDs on the ZnO NRs surface may lead to the formation of barrier layer and hindered the back electron transfer and thereby high light harvesting efficiency.",

author = "Prabhakar Rai and Rizwan Khan and Ko, {Kyeong Jun} and Lee, {Jong Heun} and Yu, {Yeon Tae}",

note = "Funding Information: Acknowledgments This paper was supported by Research Funds of Korea University in 2013. This paper was also supported by BK21 plus program from Ministry of Education and Human-Resource Development, and National Research Foundation (NRF) grant funded by the Korea government (MEST) (NRF-2010-0019626, 2012R1A2A2 A01006787).",

year = "2014",

month = jul,

doi = "10.1007/s10854-014-1954-7",

language = "English",

volume = "25",

pages = "2872--2877",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - CeO2 quantum dot functionalized ZnO nanorods photoanode for DSSC applications

AU - Rai, Prabhakar

AU - Khan, Rizwan

AU - Ko, Kyeong Jun

AU - Lee, Jong Heun

AU - Yu, Yeon Tae

N1 - Funding Information: Acknowledgments This paper was supported by Research Funds of Korea University in 2013. This paper was also supported by BK21 plus program from Ministry of Education and Human-Resource Development, and National Research Foundation (NRF) grant funded by the Korea government (MEST) (NRF-2010-0019626, 2012R1A2A2 A01006787).

PY - 2014/7

Y1 - 2014/7

N2 - Cerium oxide quantum dots (CeO2 QDs) decorated zinc oxide nanorods (ZnO NRs) heterostructures were grown by a combination of solvothermal and chemical bath deposition methods and used for dye sensitized solar cell (DSSC) applications. Transmission electron microscope images showed the formation of CeO2/ZnO NRs, where ~5 nm CeO2 QDs were decorated on ZnO NRs having 1-2.5 μm length and 100-150 nm width. Photoluminescence spectra showed the significant increase in UV emission after decoration of ZnO NRs with CeO2 QDs. DSSC results revealed that the ZnO NRs with CeO2 QDs leads to an increase in the open circuit voltage and fill factor and exhibited a maximum efficiency of 2.65 %, which was 2.01 times higher than that of unmodified ZnO NRs. The decoration of CeO 2 QDs on the ZnO NRs surface may lead to the formation of barrier layer and hindered the back electron transfer and thereby high light harvesting efficiency.

AB - Cerium oxide quantum dots (CeO2 QDs) decorated zinc oxide nanorods (ZnO NRs) heterostructures were grown by a combination of solvothermal and chemical bath deposition methods and used for dye sensitized solar cell (DSSC) applications. Transmission electron microscope images showed the formation of CeO2/ZnO NRs, where ~5 nm CeO2 QDs were decorated on ZnO NRs having 1-2.5 μm length and 100-150 nm width. Photoluminescence spectra showed the significant increase in UV emission after decoration of ZnO NRs with CeO2 QDs. DSSC results revealed that the ZnO NRs with CeO2 QDs leads to an increase in the open circuit voltage and fill factor and exhibited a maximum efficiency of 2.65 %, which was 2.01 times higher than that of unmodified ZnO NRs. The decoration of CeO 2 QDs on the ZnO NRs surface may lead to the formation of barrier layer and hindered the back electron transfer and thereby high light harvesting efficiency.

UR - http://www.scopus.com/inward/record.url?scp=84902491091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902491091&partnerID=8YFLogxK

U2 - 10.1007/s10854-014-1954-7

DO - 10.1007/s10854-014-1954-7

M3 - Article

AN - SCOPUS:84902491091

VL - 25

SP - 2872

EP - 2877

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 7