Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

Dae Kyu Kim, Dongsun Choi, Mihyeon Park, Kwang Seob Jeong, Jong Ho Choi

Research output: Contribution to journalArticle

Abstract

Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.

Original languageEnglish
Pages (from-to)21944-21951
Number of pages8
JournalACS Applied Materials and Interfaces
Volume12
Issue number19
DOIs
Publication statusPublished - 2020 May 13

Keywords

  • CsPbBr quantum dots
  • diffusion length
  • light-emitting field-effect transistor
  • organic/inorganic hybrid field-effect transistor
  • wide recombination zone

ASJC Scopus subject areas

  • Materials Science(all)

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