Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)2 Thin-Film Solar Cells

Se Jin Park, Hyo Sang Jeon, Jin Woo Cho, Yun Jeong Hwang, Kyung Su Park, Hyeong Seop Shim, Jae Kyu Song, Yunae Cho, Dong Wook Kim, Ji Hyun Kim, Byoung Koun Min

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23 Citations (Scopus)

Abstract

Significant enhancement of solution-processed CuInxGa1-x(Se,S)2 (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with Jsc of 28.3 mA/cm2, Voc of 601 mV, and FF of 68.6%.

Original languageEnglish
Pages (from-to)27391-27396
Number of pages6
JournalACS Applied Materials and Interfaces
Volume7
Issue number49
DOIs
Publication statusPublished - 2015 Dec 16

Keywords

  • band gap grading
  • chalcogenization
  • CIGSSe
  • solar cells
  • solution process

ASJC Scopus subject areas

  • Materials Science(all)

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    Park, S. J., Jeon, H. S., Cho, J. W., Hwang, Y. J., Park, K. S., Shim, H. S., Song, J. K., Cho, Y., Kim, D. W., Kim, J. H., & Min, B. K. (2015). Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)2 Thin-Film Solar Cells. ACS Applied Materials and Interfaces, 7(49), 27391-27396. https://doi.org/10.1021/acsami.5b09054