Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

Donghun Kang, Wanjun Park, Byungkye Kim, Jujin Kim, Cheoljin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.

Original languageEnglish
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages370-372
Number of pages3
Publication statusPublished - 2004
Externally publishedYes
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 2004 Aug 162004 Aug 19

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period04/8/1604/8/19

Keywords

  • Environment effects
  • Gallium phosphide
  • Nano electronics
  • Nanowire transistors

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kang, D., Park, W., Kim, B., Kim, J., & Lee, C. (2004). Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. In 2004 4th IEEE Conference on Nanotechnology (pp. 370-372). (2004 4th IEEE Conference on Nanotechnology).