Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

Donghun Kang, Wanjun Park, Byungkye Kim, Jujin Kim, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.

Original languageEnglish
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages370-372
Number of pages3
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 2004 Aug 162004 Aug 19

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period04/8/1604/8/19

Fingerprint

Gallium phosphide
Nanowires
Transistors
Air
Vacuum
Charge transfer

Keywords

  • Environment effects
  • Gallium phosphide
  • Nano electronics
  • Nanowire transistors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kang, D., Park, W., Kim, B., Kim, J., & Lee, C. J. (2004). Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. In 2004 4th IEEE Conference on Nanotechnology (pp. 370-372)

Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. / Kang, Donghun; Park, Wanjun; Kim, Byungkye; Kim, Jujin; Lee, Cheol Jin.

2004 4th IEEE Conference on Nanotechnology. 2004. p. 370-372.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, D, Park, W, Kim, B, Kim, J & Lee, CJ 2004, Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. in 2004 4th IEEE Conference on Nanotechnology. pp. 370-372, 2004 4th IEEE Conference on Nanotechnology, Munich, Germany, 04/8/16.
Kang D, Park W, Kim B, Kim J, Lee CJ. Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. In 2004 4th IEEE Conference on Nanotechnology. 2004. p. 370-372
Kang, Donghun ; Park, Wanjun ; Kim, Byungkye ; Kim, Jujin ; Lee, Cheol Jin. / Change in electrical characteristics of gallium phosphide nanowire transistors under different environments. 2004 4th IEEE Conference on Nanotechnology. 2004. pp. 370-372
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