Change of kinetic roughening with surfactant hydrogen in Ge on Si(001) system

Se Jong Kahng, Young Kuk

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The growth mode of Ge on a Si(001) substrate can be modified in the presence of dynamically supplied atomic hydrogen as a surfactant. A transition from the 3D to 2D growth was observed in scanning tunneling microscope images as the hydrogen flux increased to 1ML/sec. A layer-by-layer growth was successfully achieved with the hydrogen surfactant up to 8 monolayers of Ge. This growth behavior can be explained by kinetic roughening theory, showing a scaling behavior. The growth and roughness exponents, α and β, seem to decrease with hydrogen. It is believed that hydrogen saturates the dangling bonds and limits diffusion of the incoming Ge, resulting in a formation of large two dimensional islands.

Original languageEnglish
Pages (from-to)59-61
Number of pages3
JournalScience Reports of the Rerearch Institutes Tohoku University Series A-Physics
Volume44
Issue number1
Publication statusPublished - 1997
Externally publishedYes

Keywords

  • Germanium
  • Hydrogen
  • Silicon
  • Surface roughening
  • Surfactant

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys

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