Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; R. A. Zinovyev; Kang Bin Bae; Tae Hoon Chung; Sung Min Hwang; J. H. Baek; S. J. Pearton

doi:10.1063/1.4983556

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, Kang Bin Bae, Tae Hoon Chung, Sung Min Hwang, J. H. Baek, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385-390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were dominated by freezing out of Mg acceptors at temperatures around 150 K, by shallow centers in the MQW region, and, for green LEDs, by deeper electron traps with a level near E_c − 0.27 eV located in the MQW region. DLTS spectra showed electron traps with levels E_c − 0.8 eV (NUV), E_c − 0.5 eV (blue), E_c − 0.6 eV (blue and NUV), and E_c − 0.27(green LEDs). In ODLTS, hole traps near E_v + 0.75 eV (NUV), E_v + 0.65 eV (blue), and E_v + 0.45 eV (green LEDs) originating in the quantum well (QW) region were detected (the QW character was confirmed by using excitation light that generated electron-hole pairs only within the QWs). The levels of the electron and hole traps in LED structures differing in the In composition in the QWs were well aligned with respect to the vacuum level.

Original language	English
Article number	192107
Journal	Applied Physics Letters
Volume	110
Issue number	19
DOIs	https://doi.org/10.1063/1.4983556
Publication status	Published - 2017 May 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{cfd7e824370447e0b33961e1ba301658,

title = "Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges",

abstract = "Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385-390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were dominated by freezing out of Mg acceptors at temperatures around 150 K, by shallow centers in the MQW region, and, for green LEDs, by deeper electron traps with a level near Ec − 0.27 eV located in the MQW region. DLTS spectra showed electron traps with levels Ec − 0.8 eV (NUV), Ec − 0.5 eV (blue), Ec − 0.6 eV (blue and NUV), and Ec − 0.27(green LEDs). In ODLTS, hole traps near Ev + 0.75 eV (NUV), Ev + 0.65 eV (blue), and Ev + 0.45 eV (green LEDs) originating in the quantum well (QW) region were detected (the QW character was confirmed by using excitation light that generated electron-hole pairs only within the QWs). The levels of the electron and hole traps in LED structures differing in the In composition in the QWs were well aligned with respect to the vacuum level.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Zinovyev, {R. A.} and Bae, {Kang Bin} and Chung, {Tae Hoon} and Hwang, {Sung Min} and Baek, {J. H.} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (К2-2014-055). The work at Korea University was supported by the Technology Innovation Program (10053288) funded by the Ministry of Trade, Industry and Energy (MOTIE), Korea. The work at UF was supported by HDTRA1-17-1-001. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = may,

day = "8",

doi = "10.1063/1.4983556",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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T1 - Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Zinovyev, R. A.

AU - Bae, Kang Bin

AU - Chung, Tae Hoon

AU - Hwang, Sung Min

AU - Baek, J. H.

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (К2-2014-055). The work at Korea University was supported by the Technology Innovation Program (10053288) funded by the Ministry of Trade, Industry and Energy (MOTIE), Korea. The work at UF was supported by HDTRA1-17-1-001. Publisher Copyright: © 2017 Author(s).

PY - 2017/5/8

Y1 - 2017/5/8

N2 - Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385-390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were dominated by freezing out of Mg acceptors at temperatures around 150 K, by shallow centers in the MQW region, and, for green LEDs, by deeper electron traps with a level near Ec − 0.27 eV located in the MQW region. DLTS spectra showed electron traps with levels Ec − 0.8 eV (NUV), Ec − 0.5 eV (blue), Ec − 0.6 eV (blue and NUV), and Ec − 0.27(green LEDs). In ODLTS, hole traps near Ev + 0.75 eV (NUV), Ev + 0.65 eV (blue), and Ev + 0.45 eV (green LEDs) originating in the quantum well (QW) region were detected (the QW character was confirmed by using excitation light that generated electron-hole pairs only within the QWs). The levels of the electron and hole traps in LED structures differing in the In composition in the QWs were well aligned with respect to the vacuum level.

AB - Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385-390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were dominated by freezing out of Mg acceptors at temperatures around 150 K, by shallow centers in the MQW region, and, for green LEDs, by deeper electron traps with a level near Ec − 0.27 eV located in the MQW region. DLTS spectra showed electron traps with levels Ec − 0.8 eV (NUV), Ec − 0.5 eV (blue), Ec − 0.6 eV (blue and NUV), and Ec − 0.27(green LEDs). In ODLTS, hole traps near Ev + 0.75 eV (NUV), Ev + 0.65 eV (blue), and Ev + 0.45 eV (green LEDs) originating in the quantum well (QW) region were detected (the QW character was confirmed by using excitation light that generated electron-hole pairs only within the QWs). The levels of the electron and hole traps in LED structures differing in the In composition in the QWs were well aligned with respect to the vacuum level.

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U2 - 10.1063/1.4983556

DO - 10.1063/1.4983556

M3 - Article

AN - SCOPUS:85018936116

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VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 192107

ER -

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

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