Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, Kang Bin Bae, Tae Hoon Chung, Sung Min Hwang, J. H. Baek, S. J. Pearton

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Abstract

Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385-390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were dominated by freezing out of Mg acceptors at temperatures around 150 K, by shallow centers in the MQW region, and, for green LEDs, by deeper electron traps with a level near Ec − 0.27 eV located in the MQW region. DLTS spectra showed electron traps with levels Ec − 0.8 eV (NUV), Ec − 0.5 eV (blue), Ec − 0.6 eV (blue and NUV), and Ec − 0.27(green LEDs). In ODLTS, hole traps near Ev + 0.75 eV (NUV), Ev + 0.65 eV (blue), and Ev + 0.45 eV (green LEDs) originating in the quantum well (QW) region were detected (the QW character was confirmed by using excitation light that generated electron-hole pairs only within the QWs). The levels of the electron and hole traps in LED structures differing in the In composition in the QWs were well aligned with respect to the vacuum level.

Original languageEnglish
Article number192107
JournalApplied Physics Letters
Volume110
Issue number19
DOIs
Publication statusPublished - 2017 May 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Zinovyev, R. A., Bae, K. B., Chung, T. H., Hwang, S. M., Baek, J. H., & Pearton, S. J. (2017). Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges. Applied Physics Letters, 110(19), [192107]. https://doi.org/10.1063/1.4983556