Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing

P. Fochuk, I. Nakonechnyi, O. Panchuk, O. Kopach, Y. Nykonyuk, R. Grill, E. Belas, Kihyun Kim, A. E. Bolotnikov, G. Yang, R. B. James

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We observed a novel unanticipated effect in CdTe, {\bf Cd}{1-{\bf x}}{\bf Zn}{\bf x}{\bf Te} and {\bf Cd}{1-{\bf x}}{\bf Mn}{\bf x}{\bf Te} crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions (temperatures of 450-500^\circ {\rm C} and under maximal cadmium-vapor pressure), we recorded a jump-like increase in the conductivity after some \sim 1 - 2 hours of heating required to stabilize the sample's electric parameters. The values of specific conductivity and free-carrier density suddenly increased by up to tenfold, and they persisted at those levels during further ageing. At the same time, the sample's conductivity became insensitive to stoichiometric changes in the crystal. We explain this effect as reflecting a sudden reformatting of the sample's native/foreign point-defect structure. This transformation is evaluated and mathematically approximated within the framework of our model of the melting of Te-containing second-phase particles; this process releases impurities from within the particles. The respective diffusion 'clouds' grow, and at the moment of their mutual percolation (infiltration), a peculiar 'short circuit' is observed with striking changes in the crystals' electrical parameters.

Original languageEnglish
Article number7117463
Pages (from-to)1239-1243
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number3
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

Isothermal annealing
conductivity
Crystals
annealing
Carrier concentration
crystals
Defect structures
Point defects
Vapor pressure
Infiltration
Short circuit currents
Cadmium
short circuits
Melting
Electric properties
infiltration
Aging of materials
Thermodynamics
Impurities
cadmium

Keywords

  • Annealing
  • component overpressure
  • crystals
  • inclusions
  • {\bf Cd}{0.9}{\bf Zn}{0.1}{\bf Te}

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Fochuk, P., Nakonechnyi, I., Panchuk, O., Kopach, O., Nykonyuk, Y., Grill, R., ... James, R. B. (2015). Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing. IEEE Transactions on Nuclear Science, 62(3), 1239-1243. [7117463]. https://doi.org/10.1109/TNS.2015.2424720

Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing. / Fochuk, P.; Nakonechnyi, I.; Panchuk, O.; Kopach, O.; Nykonyuk, Y.; Grill, R.; Belas, E.; Kim, Kihyun; Bolotnikov, A. E.; Yang, G.; James, R. B.

In: IEEE Transactions on Nuclear Science, Vol. 62, No. 3, 7117463, 01.06.2015, p. 1239-1243.

Research output: Contribution to journalArticle

Fochuk, P, Nakonechnyi, I, Panchuk, O, Kopach, O, Nykonyuk, Y, Grill, R, Belas, E, Kim, K, Bolotnikov, AE, Yang, G & James, RB 2015, 'Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing', IEEE Transactions on Nuclear Science, vol. 62, no. 3, 7117463, pp. 1239-1243. https://doi.org/10.1109/TNS.2015.2424720
Fochuk P, Nakonechnyi I, Panchuk O, Kopach O, Nykonyuk Y, Grill R et al. Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing. IEEE Transactions on Nuclear Science. 2015 Jun 1;62(3):1239-1243. 7117463. https://doi.org/10.1109/TNS.2015.2424720
Fochuk, P. ; Nakonechnyi, I. ; Panchuk, O. ; Kopach, O. ; Nykonyuk, Y. ; Grill, R. ; Belas, E. ; Kim, Kihyun ; Bolotnikov, A. E. ; Yang, G. ; James, R. B. / Changes in the Electrical Parameters of CdTe-based Crystals during Isothermal Annealing. In: IEEE Transactions on Nuclear Science. 2015 ; Vol. 62, No. 3. pp. 1239-1243.
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