Abstract
Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.
| Original language | English |
|---|---|
| Article number | 053114 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Feb 4 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors. / Joo, Min Kyu; Huh, Junghwan; Mouis, Mireille; Park, So Jeong; Jeon, Dae Young; Jang, Doyoung; Lee, Jong Heun; Kim, Gyu-Tae; Ghibaudo, Gérard.
In: Applied Physics Letters, Vol. 102, No. 5, 053114, 04.02.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
AU - Joo, Min Kyu
AU - Huh, Junghwan
AU - Mouis, Mireille
AU - Park, So Jeong
AU - Jeon, Dae Young
AU - Jang, Doyoung
AU - Lee, Jong Heun
AU - Kim, Gyu-Tae
AU - Ghibaudo, Gérard
PY - 2013/2/4
Y1 - 2013/2/4
N2 - Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.
AB - Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.
UR - http://www.scopus.com/inward/record.url?scp=84874071030&partnerID=8YFLogxK
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U2 - 10.1063/1.4788708
DO - 10.1063/1.4788708
M3 - Article
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 053114
ER -