Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Min Kyu Joo; Junghwan Huh; Mireille Mouis; So Jeong Park; Dae Young Jeon; Doyoung Jang; Jong Heun Lee; Gyu-Tae Kim; Gérard Ghibaudo

doi:10.1063/1.4788708

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors

Min Kyu Joo, Junghwan Huh, Mireille Mouis, So Jeong Park, Dae Young Jeon, Doyoung Jang, Jong Heun Lee, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Channel access resistance (R_sd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO₂-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without R_sd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (C_gc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO₂/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided R_sd influence is included.

Original language	English
Article number	053114
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4788708
Publication status	Published - 2013 Feb 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors. / Joo, Min Kyu; Huh, Junghwan; Mouis, Mireille; Park, So Jeong; Jeon, Dae Young; Jang, Doyoung; Lee, Jong Heun ; Kim, Gyu-Tae; Ghibaudo, Gérard.

In: Applied Physics Letters, Vol. 102, No. 5, 053114, 04.02.2013.

Research output: Contribution to journal › Article › peer-review

Joo, Min Kyu ; Huh, Junghwan ; Mouis, Mireille ; Park, So Jeong ; Jeon, Dae Young ; Jang, Doyoung ; Lee, Jong Heun ; Kim, Gyu-Tae ; Ghibaudo, Gérard. / Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors. In: Applied Physics Letters. 2013 ; Vol. 102, No. 5.

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title = "Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors",

abstract = "Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.",

author = "Joo, {Min Kyu} and Junghwan Huh and Mireille Mouis and Park, {So Jeong} and Jeon, {Dae Young} and Doyoung Jang and Lee, {Jong Heun} and Gyu-Tae Kim and G{\'e}rard Ghibaudo",

note = "Funding Information: This research was partly supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2011K000623, R32-2011-000-10082-0(WCU), 2011-0031638, and M6060500007-06A0500-00710(GRL)), CNRS-KIST LIA collaboration, and NRF grant funded by the Korea government (MEST).",

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AU - Joo, Min Kyu

AU - Huh, Junghwan

AU - Mouis, Mireille

AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Jang, Doyoung

AU - Lee, Jong Heun

AU - Kim, Gyu-Tae

AU - Ghibaudo, Gérard

N1 - Funding Information: This research was partly supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2011K000623, R32-2011-000-10082-0(WCU), 2011-0031638, and M6060500007-06A0500-00710(GRL)), CNRS-KIST LIA collaboration, and NRF grant funded by the Korea government (MEST).

PY - 2013/2/4

Y1 - 2013/2/4

N2 - Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.

AB - Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors

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