Abstract
Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.
Original language | English |
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Article number | 053114 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 Feb 4 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)