Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Min Kyu Joo, Junghwan Huh, Mireille Mouis, So Jeong Park, Dae Young Jeon, Doyoung Jang, Jong Heun Lee, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.

Original languageEnglish
Article number053114
JournalApplied Physics Letters
Volume102
Issue number5
DOIs
Publication statusPublished - 2013 Feb 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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