Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Engineering & Materials Science

• Nanowires 90%
• Field effect transistors 77%
• Transistors 62%
• Electric power measurement 50%
• Drain current 46%
• Nanostructured materials 45%
• Transconductance 43%
• MOSFET devices 42%
• Wearable technology 40%
• Doping (additives) 40%
• Activation energy 38%
• Electrons 36%
• Silicon 28%
• Costs 13%

Chemical Compounds

• Schottky Barrier 100%
• Field Effect 72%
• Nanowire 63%
• Length 32%
• Drain Current 28%
• Transconductance 28%
• Doping Material 16%
• Reaction Activation Energy 12%
• Nanomaterial 11%
• Electron Particle 9%