Channel limitation of 1-D wire random network for transparent conducting electrodes application

Jinyoung Hwang; Sang Hyun Lee; Hyosug Lee

doi:10.1109/NMDC.2015.7439277

Channel limitation of 1-D wire random network for transparent conducting electrodes application

Jinyoung Hwang, Sang Hyun Lee, Hyosug Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

1-D wire random network is a promising ITO substitute for flexible transparent conducting electrodes. However, the sheet resistance (R_s) of the 1-D network drastically increases when the network is patterned into narrow channels in electronic applications such as touch screen panel and light emitting diodes. In this work, the undesirable Rs increment of the 1-D wire random network is demonstrated based on Monte Carlo simulation, and critical factors that determine the channel width limitation are investigated. Moreover, aligned wire configuration in the random network is proposed in order to alleviate the constraint on the R_s of the narrow channel.

Original language	English
Title of host publication	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467393621
DOIs	https://doi.org/10.1109/NMDC.2015.7439277
Publication status	Published - 2016 Mar 22
Externally published	Yes
Event	10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 - Anchorage, United States Duration: 2015 Sep 12 → 2015 Sep 16

Publication series

Name	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

Conference

Conference	10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Country	United States
City	Anchorage
Period	15/9/12 → 15/9/16

Keywords

Monte Carlo simulation
Nanowire random network
Transparent conducting electrodes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/NMDC.2015.7439277

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Hwang, J., Lee, S. H., & Lee, H. (2016). Channel limitation of 1-D wire random network for transparent conducting electrodes application. In 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 [7439277] (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC.2015.7439277

Channel limitation of 1-D wire random network for transparent conducting electrodes application. / Hwang, Jinyoung; Lee, Sang Hyun; Lee, Hyosug.

2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7439277 (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hwang, J, Lee, SH & Lee, H 2016, Channel limitation of 1-D wire random network for transparent conducting electrodes application. in 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015., 7439277, 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015, Anchorage, United States, 15/9/12. https://doi.org/10.1109/NMDC.2015.7439277

Hwang J, Lee SH, Lee H. Channel limitation of 1-D wire random network for transparent conducting electrodes application. In 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7439277. (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015). https://doi.org/10.1109/NMDC.2015.7439277

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abstract = "1-D wire random network is a promising ITO substitute for flexible transparent conducting electrodes. However, the sheet resistance (Rs) of the 1-D network drastically increases when the network is patterned into narrow channels in electronic applications such as touch screen panel and light emitting diodes. In this work, the undesirable Rs increment of the 1-D wire random network is demonstrated based on Monte Carlo simulation, and critical factors that determine the channel width limitation are investigated. Moreover, aligned wire configuration in the random network is proposed in order to alleviate the constraint on the Rs of the narrow channel.",

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N2 - 1-D wire random network is a promising ITO substitute for flexible transparent conducting electrodes. However, the sheet resistance (Rs) of the 1-D network drastically increases when the network is patterned into narrow channels in electronic applications such as touch screen panel and light emitting diodes. In this work, the undesirable Rs increment of the 1-D wire random network is demonstrated based on Monte Carlo simulation, and critical factors that determine the channel width limitation are investigated. Moreover, aligned wire configuration in the random network is proposed in order to alleviate the constraint on the Rs of the narrow channel.

AB - 1-D wire random network is a promising ITO substitute for flexible transparent conducting electrodes. However, the sheet resistance (Rs) of the 1-D network drastically increases when the network is patterned into narrow channels in electronic applications such as touch screen panel and light emitting diodes. In this work, the undesirable Rs increment of the 1-D wire random network is demonstrated based on Monte Carlo simulation, and critical factors that determine the channel width limitation are investigated. Moreover, aligned wire configuration in the random network is proposed in order to alleviate the constraint on the Rs of the narrow channel.

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Channel limitation of 1-D wire random network for transparent conducting electrodes application

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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