Channel width dependence of electrical characteristics of a-Si: H TFTs under bending stresses

Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

Original languageEnglish
Article number045002
JournalSemiconductor Science and Technology
Volume32
Issue number4
DOIs
Publication statusPublished - 2017 Mar 6

Fingerprint

Thin film transistors
transistors
thin films
Bending (deformation)
cycles
strain distribution
stress distribution

Keywords

  • a-Si:H TFT
  • bendable TFT
  • bending stress
  • channel width

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Channel width dependence of electrical characteristics of a-Si : H TFTs under bending stresses. / Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 32, No. 4, 045002, 06.03.2017.

Research output: Contribution to journalArticle

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