The effects of the physical channel width on the characteristics of organic thin film transistors (OTFTs), made with 6,13-bis(triisopropyl-silylethynyl)-pentacene (TIPS-pentacene) embedded into poly-triarylamine (PTAA, hole conductor within an active channel), have been examined in this paper. The devices are estimated by measuring the drain-source current (IDS) for different contact metals such as Au and Ag, at fixed gate and drain voltages. The results show that the threshold voltage (VT) and IDS increase with increasing channel width. Furthermore, it has been observed that the field effect mobility is dependent on VT, which is influenced by the channel width. The OTFTs, produced using Au and Ag contacts, exhibited the highest values of mobility in the saturation regime, namely 5.44 × 10-2 and 1.33 × 10-2 cm2/Vs, respectively.
- Channel width effect
- Organic thin film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering