Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O3 thin films

K. B. Lee; B. K. Ju; Seshu B. Desu

Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O₃ thin films

K. B. Lee, B. K. Ju, Seshu B. Desu

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O₃, i.e., (Pb_1-xSr_x)(Zr_0.53Ti_0.47)O₃ (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO₂/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (ε_r) as well as remanent polarization (P_r) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose P_r and ε_r are 5 μC/cm² and 350, respectively, and leakage current density is low as 1×10^-7 A/cm² at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO₃ thin films.

Original language	English
Pages (from-to)	235-240
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	596
Publication status	Published - 2000
Externally published	Yes
Event	Ferroelectric Thin Films VIII - Boston, MA, USA Duration: 1999 Nov 29 → 1999 Dec 2

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{15ba0ddf711b452eb5ecc3d7dd7ef623,

title = "Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O3 thin films",

abstract = "We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O3, i.e., (Pb1-xSrx)(Zr0.53Ti0.47)O3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (εr) as well as remanent polarization (Pr) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose Pr and εr are 5 μC/cm2 and 350, respectively, and leakage current density is low as 1×10-7 A/cm2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO3 thin films.",

author = "Lee, {K. B.} and Ju, {B. K.} and Desu, {Seshu B.}",

year = "2000",

language = "English",

volume = "596",

pages = "235--240",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films VIII ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O3 thin films

AU - Lee, K. B.

AU - Ju, B. K.

AU - Desu, Seshu B.

PY - 2000

Y1 - 2000

N2 - We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O3, i.e., (Pb1-xSrx)(Zr0.53Ti0.47)O3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (εr) as well as remanent polarization (Pr) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose Pr and εr are 5 μC/cm2 and 350, respectively, and leakage current density is low as 1×10-7 A/cm2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO3 thin films.

AB - We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O3, i.e., (Pb1-xSrx)(Zr0.53Ti0.47)O3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (εr) as well as remanent polarization (Pr) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose Pr and εr are 5 μC/cm2 and 350, respectively, and leakage current density is low as 1×10-7 A/cm2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO3 thin films.

UR - http://www.scopus.com/inward/record.url?scp=0033679439&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033679439&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033679439

SN - 0272-9172

VL - 596

SP - 235

EP - 240

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Ferroelectric Thin Films VIII

Y2 - 29 November 1999 through 2 December 1999

ER -

Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O₃ thin films

Abstract

ASJC Scopus subject areas

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