Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films

K. B. Lee, Byeong Kwon Ju, Seshu B. Desu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O 3, i.e., (Pb 1-xSr x)(Zr 0.53Ti 0.47)O 3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO 2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (ε r) as well as remanent polarization (P r) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose P r and ε r are 5 μC/cm 2 and 350, respectively, and leakage current density is low as 1×10 -7 A/cm 2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO 3 thin films.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages235-240
Number of pages6
Volume596
Publication statusPublished - 2000
Externally publishedYes
EventFerroelectric Thin Films VIII - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 2

Other

OtherFerroelectric Thin Films VIII
CityBoston, MA, USA
Period99/11/2999/12/2

Fingerprint

Ferroelectric materials
Thin films
Permittivity
Remanence
Leakage currents
Perovskite
Sol-gels
Structural properties
Casting
Electric properties
Capacitors
Substitution reactions
Current density
Electric fields
Polarization
Data storage equipment
Substrates
perovskite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, K. B., Ju, B. K., & Desu, S. B. (2000). Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films In Materials Research Society Symposium - Proceedings (Vol. 596, pp. 235-240). Materials Research Society.

Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films . / Lee, K. B.; Ju, Byeong Kwon; Desu, Seshu B.

Materials Research Society Symposium - Proceedings. Vol. 596 Materials Research Society, 2000. p. 235-240.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, KB, Ju, BK & Desu, SB 2000, Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films in Materials Research Society Symposium - Proceedings. vol. 596, Materials Research Society, pp. 235-240, Ferroelectric Thin Films VIII, Boston, MA, USA, 99/11/29.
Lee KB, Ju BK, Desu SB. Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films In Materials Research Society Symposium - Proceedings. Vol. 596. Materials Research Society. 2000. p. 235-240
Lee, K. B. ; Ju, Byeong Kwon ; Desu, Seshu B. / Characteristics and applications of Sr-modified ferroelectric Pb(Zr,Ti)O 3 thin films Materials Research Society Symposium - Proceedings. Vol. 596 Materials Research Society, 2000. pp. 235-240
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N2 - We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O 3, i.e., (Pb 1-xSr x)(Zr 0.53Ti 0.47)O 3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO 2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (ε r) as well as remanent polarization (P r) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose P r and ε r are 5 μC/cm 2 and 350, respectively, and leakage current density is low as 1×10 -7 A/cm 2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO 3 thin films.

AB - We have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O 3, i.e., (Pb 1-xSr x)(Zr 0.53Ti 0.47)O 3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO 2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (ε r) as well as remanent polarization (P r) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose P r and ε r are 5 μC/cm 2 and 350, respectively, and leakage current density is low as 1×10 -7 A/cm 2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO 3 thin films.

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