Characteristics of 1.56-μm quantum-dot-distributed feedback lasers

Dong Sup Kim, Yun Joo Kim, Kyoung Chan Kim, Tae Geun Kim, Byung Seok Choi, Dae Kon Oh

Research output: Contribution to journalArticle

2 Citations (Scopus)


Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm -1 was calculated from the subthreshold spectrum.

Original languageEnglish
Pages (from-to)1633-1636
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2006 Jun 1


  • InAs/InAlGaAs
  • Laser diodes
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Kim, D. S., Kim, Y. J., Kim, K. C., Kim, T. G., Choi, B. S., & Oh, D. K. (2006). Characteristics of 1.56-μm quantum-dot-distributed feedback lasers. Journal of the Korean Physical Society, 48(6), 1633-1636.