Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm -1 was calculated from the subthreshold spectrum.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2006 Jun 1|
- Laser diodes
- Quantum dot
ASJC Scopus subject areas
- Physics and Astronomy(all)