Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes

Kyong Seok Chae, Dong Wook Kim, Bong Soo Kim, Sung Jin Som, In-Hwan Lee, Cheul Ro Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1- xN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AlN buffer layer. This device consisted of a 1.3 μm thick Al0.15Ga0.85N "window layer", a 0.16 μm thick Al0.08Ga0.92N i-layer, a 0.46 μm thick Al0.08Ga0.92N p-layer, a 0.1 μm thick GaN p-layer, followed by a 30 nm GaN:Mg p+-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19%. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm2 at zero-bias.

Original languageEnglish
Pages (from-to)367-373
Number of pages7
JournalJournal of Crystal Growth
Volume276
Issue number3-4
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Fingerprint

Buffer layers
Photodetectors
Photodiodes
photodiodes
photometers
Aluminum Oxide
Dark currents
Metallorganic chemical vapor deposition
Photolithography
Processing
Metallizing
Mountings
Quantum efficiency
Sapphire
Flow of gases
Etching
Current density
Flow rate
Semiconductor materials
Fabrication

Keywords

  • A1. Heat resolution X-ray diffraction
  • A2. Growth from high temperature solutions
  • A3. Metalorganic chemical vapor deposition
  • B1. Gallium compounds
  • B2. Semiconducting III-V materials
  • B3. Hetero-junction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes. / Chae, Kyong Seok; Kim, Dong Wook; Kim, Bong Soo; Som, Sung Jin; Lee, In-Hwan; Lee, Cheul Ro.

In: Journal of Crystal Growth, Vol. 276, No. 3-4, 01.04.2005, p. 367-373.

Research output: Contribution to journalArticle

Chae, Kyong Seok ; Kim, Dong Wook ; Kim, Bong Soo ; Som, Sung Jin ; Lee, In-Hwan ; Lee, Cheul Ro. / Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes. In: Journal of Crystal Growth. 2005 ; Vol. 276, No. 3-4. pp. 367-373.
@article{db5326ce1a374a9c97b72f76c84a0724,
title = "Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes",
abstract = "In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1- xN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AlN buffer layer. This device consisted of a 1.3 μm thick Al0.15Ga0.85N {"}window layer{"}, a 0.16 μm thick Al0.08Ga0.92N i-layer, a 0.46 μm thick Al0.08Ga0.92N p-layer, a 0.1 μm thick GaN p-layer, followed by a 30 nm GaN:Mg p+-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19{\%}. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm2 at zero-bias.",
keywords = "A1. Heat resolution X-ray diffraction, A2. Growth from high temperature solutions, A3. Metalorganic chemical vapor deposition, B1. Gallium compounds, B2. Semiconducting III-V materials, B3. Hetero-junction semiconductor devices",
author = "Chae, {Kyong Seok} and Kim, {Dong Wook} and Kim, {Bong Soo} and Som, {Sung Jin} and In-Hwan Lee and Lee, {Cheul Ro}",
year = "2005",
month = "4",
day = "1",
doi = "10.1016/j.jcrysgro.2004.11.405",
language = "English",
volume = "276",
pages = "367--373",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes

AU - Chae, Kyong Seok

AU - Kim, Dong Wook

AU - Kim, Bong Soo

AU - Som, Sung Jin

AU - Lee, In-Hwan

AU - Lee, Cheul Ro

PY - 2005/4/1

Y1 - 2005/4/1

N2 - In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1- xN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AlN buffer layer. This device consisted of a 1.3 μm thick Al0.15Ga0.85N "window layer", a 0.16 μm thick Al0.08Ga0.92N i-layer, a 0.46 μm thick Al0.08Ga0.92N p-layer, a 0.1 μm thick GaN p-layer, followed by a 30 nm GaN:Mg p+-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19%. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm2 at zero-bias.

AB - In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1- xN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AlN buffer layer. This device consisted of a 1.3 μm thick Al0.15Ga0.85N "window layer", a 0.16 μm thick Al0.08Ga0.92N i-layer, a 0.46 μm thick Al0.08Ga0.92N p-layer, a 0.1 μm thick GaN p-layer, followed by a 30 nm GaN:Mg p+-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19%. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm2 at zero-bias.

KW - A1. Heat resolution X-ray diffraction

KW - A2. Growth from high temperature solutions

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Gallium compounds

KW - B2. Semiconducting III-V materials

KW - B3. Hetero-junction semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=15344343863&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15344343863&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.11.405

DO - 10.1016/j.jcrysgro.2004.11.405

M3 - Article

VL - 276

SP - 367

EP - 373

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -