Characteristics of back-illumination UV photodetector fabricated with AlxGa1-xN heterostructure

Kyong Seok Chae, In-Hwan Lee, Byung Joon Baek, Kyeong Won Seol, Haeng Keun Ahn, Cheul Ro Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the growth, fabrication and characterization of an Al xGa1-xN heteroepitaxial back-illuminated UV photodetector used for flip-chip mounting. This device is grown on a one-side-polished sapphire substrate with a low-temperature AlN buffer layer by 6-pocket multi-wafer metalorganic chemical vapor deposition (MOCVD) using a vertical reactor. In order to attain the UV region, we increased the Al mole fraction in the AlxGa1-xN epilayer and acquired an Al xGa1-xN epilayer that shows a crack-free surface morphology when the Al mole fraction was 30%. This device consists of a 1.2-μm-thick Al0.3Ga0.7N "window layer", 0.16-μm-thick Al0.08Ga0.92N i-layer, 0.46-μm-thick Al0.08Ga0.92N p-layer, 0.1-μm-thick GaN p-layer and a 30-nm-thick GaN:Mg p+-contact layer. All device processes were completed by standard semiconductor processing techniques that include photolithography, metallization and etching. In this device, the zero-bias peak responsivity is measured to be about 0.1 A/W at 350 nm, which corresponds to an external quantum efficiency of 36%. The rise-and-fall time of the photoresponse is 4.1 ns. This device exhibits a low dark current density of 31.9 pA/cm 2 at zero bias. Therefore, we can successfully obtain the back-illuminated UV photodetector with good responsivity, fast photoresponse time and low dark current.

Original languageEnglish
Pages (from-to)2553-2555
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Fingerprint

Epilayers
Dark currents
Photodetectors
photometers
Heterojunctions
Lighting
illumination
Metallorganic chemical vapor deposition
Photolithography
Buffer layers
Metallizing
Mountings
Quantum efficiency
Sapphire
Surface morphology
Etching
Current density
Semiconductor materials
dark current
Cracks

Keywords

  • Dark current
  • MOCVD
  • p-i-n photodetector
  • Response time
  • Responsivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Characteristics of back-illumination UV photodetector fabricated with AlxGa1-xN heterostructure. / Chae, Kyong Seok; Lee, In-Hwan; Baek, Byung Joon; Seol, Kyeong Won; Ahn, Haeng Keun; Lee, Cheul Ro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 01.04.2005, p. 2553-2555.

Research output: Contribution to journalArticle

Chae, Kyong Seok ; Lee, In-Hwan ; Baek, Byung Joon ; Seol, Kyeong Won ; Ahn, Haeng Keun ; Lee, Cheul Ro. / Characteristics of back-illumination UV photodetector fabricated with AlxGa1-xN heterostructure. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 4 B. pp. 2553-2555.
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AU - Chae, Kyong Seok

AU - Lee, In-Hwan

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AU - Seol, Kyeong Won

AU - Ahn, Haeng Keun

AU - Lee, Cheul Ro

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N2 - We report the growth, fabrication and characterization of an Al xGa1-xN heteroepitaxial back-illuminated UV photodetector used for flip-chip mounting. This device is grown on a one-side-polished sapphire substrate with a low-temperature AlN buffer layer by 6-pocket multi-wafer metalorganic chemical vapor deposition (MOCVD) using a vertical reactor. In order to attain the UV region, we increased the Al mole fraction in the AlxGa1-xN epilayer and acquired an Al xGa1-xN epilayer that shows a crack-free surface morphology when the Al mole fraction was 30%. This device consists of a 1.2-μm-thick Al0.3Ga0.7N "window layer", 0.16-μm-thick Al0.08Ga0.92N i-layer, 0.46-μm-thick Al0.08Ga0.92N p-layer, 0.1-μm-thick GaN p-layer and a 30-nm-thick GaN:Mg p+-contact layer. All device processes were completed by standard semiconductor processing techniques that include photolithography, metallization and etching. In this device, the zero-bias peak responsivity is measured to be about 0.1 A/W at 350 nm, which corresponds to an external quantum efficiency of 36%. The rise-and-fall time of the photoresponse is 4.1 ns. This device exhibits a low dark current density of 31.9 pA/cm 2 at zero bias. Therefore, we can successfully obtain the back-illuminated UV photodetector with good responsivity, fast photoresponse time and low dark current.

AB - We report the growth, fabrication and characterization of an Al xGa1-xN heteroepitaxial back-illuminated UV photodetector used for flip-chip mounting. This device is grown on a one-side-polished sapphire substrate with a low-temperature AlN buffer layer by 6-pocket multi-wafer metalorganic chemical vapor deposition (MOCVD) using a vertical reactor. In order to attain the UV region, we increased the Al mole fraction in the AlxGa1-xN epilayer and acquired an Al xGa1-xN epilayer that shows a crack-free surface morphology when the Al mole fraction was 30%. This device consists of a 1.2-μm-thick Al0.3Ga0.7N "window layer", 0.16-μm-thick Al0.08Ga0.92N i-layer, 0.46-μm-thick Al0.08Ga0.92N p-layer, 0.1-μm-thick GaN p-layer and a 30-nm-thick GaN:Mg p+-contact layer. All device processes were completed by standard semiconductor processing techniques that include photolithography, metallization and etching. In this device, the zero-bias peak responsivity is measured to be about 0.1 A/W at 350 nm, which corresponds to an external quantum efficiency of 36%. The rise-and-fall time of the photoresponse is 4.1 ns. This device exhibits a low dark current density of 31.9 pA/cm 2 at zero bias. Therefore, we can successfully obtain the back-illuminated UV photodetector with good responsivity, fast photoresponse time and low dark current.

KW - Dark current

KW - MOCVD

KW - p-i-n photodetector

KW - Response time

KW - Responsivity

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