Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications

K. H. Cho, J. Y. Ha, J. W. Choi, J. S. Kim, S. J. Yoon, C. Y. Kang, Y. P. Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.

Original languageEnglish
Pages (from-to)1076-1080
Number of pages5
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1
Externally publishedYes

Keywords

  • BaSrTiO
  • Dielectric properties
  • Ferroelectric film
  • Tunable microwave device

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Cho, K. H., Ha, J. Y., Choi, J. W., Kim, J. S., Yoon, S. J., Kang, C. Y., & Lee, Y. P. (2006). Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. Journal of the Korean Physical Society, 49(3), 1076-1080.