Abstract
Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.
| Original language | English |
|---|---|
| Pages (from-to) | 1076-1080 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 49 |
| Issue number | 3 |
| Publication status | Published - 2006 Sep 1 |
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Keywords
- BaSrTiO
- Dielectric properties
- Ferroelectric film
- Tunable microwave device
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. / Cho, K. H.; Ha, J. Y.; Choi, J. W.; Kim, J. S.; Yoon, S. J.; Kang, Chong-Yun; Lee, Y. P.
In: Journal of the Korean Physical Society, Vol. 49, No. 3, 01.09.2006, p. 1076-1080.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications
AU - Cho, K. H.
AU - Ha, J. Y.
AU - Choi, J. W.
AU - Kim, J. S.
AU - Yoon, S. J.
AU - Kang, Chong-Yun
AU - Lee, Y. P.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.
AB - Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.
KW - BaSrTiO
KW - Dielectric properties
KW - Ferroelectric film
KW - Tunable microwave device
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UR - http://www.scopus.com/inward/citedby.url?scp=33749824446&partnerID=8YFLogxK
M3 - Article
VL - 49
SP - 1076
EP - 1080
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 3
ER -