Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications

K. H. Cho, J. Y. Ha, J. W. Choi, J. S. Kim, S. J. Yoon, Chong-Yun Kang, Y. P. Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.

Original languageEnglish
Pages (from-to)1076-1080
Number of pages5
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

Fingerprint

microwaves
thin films
dielectric properties
annealing
microwave frequencies
dielectric loss
field emission
magnetron sputtering
electron microscopes
resonators
atomic force microscopy
permittivity
scanning
room temperature
diffraction
x rays

Keywords

  • BaSrTiO
  • Dielectric properties
  • Ferroelectric film
  • Tunable microwave device

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Cho, K. H., Ha, J. Y., Choi, J. W., Kim, J. S., Yoon, S. J., Kang, C-Y., & Lee, Y. P. (2006). Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. Journal of the Korean Physical Society, 49(3), 1076-1080.

Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. / Cho, K. H.; Ha, J. Y.; Choi, J. W.; Kim, J. S.; Yoon, S. J.; Kang, Chong-Yun; Lee, Y. P.

In: Journal of the Korean Physical Society, Vol. 49, No. 3, 01.09.2006, p. 1076-1080.

Research output: Contribution to journalArticle

Cho, KH, Ha, JY, Choi, JW, Kim, JS, Yoon, SJ, Kang, C-Y & Lee, YP 2006, 'Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications', Journal of the Korean Physical Society, vol. 49, no. 3, pp. 1076-1080.
Cho KH, Ha JY, Choi JW, Kim JS, Yoon SJ, Kang C-Y et al. Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. Journal of the Korean Physical Society. 2006 Sep 1;49(3):1076-1080.
Cho, K. H. ; Ha, J. Y. ; Choi, J. W. ; Kim, J. S. ; Yoon, S. J. ; Kang, Chong-Yun ; Lee, Y. P. / Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications. In: Journal of the Korean Physical Society. 2006 ; Vol. 49, No. 3. pp. 1076-1080.
@article{f67bdf3ef3c445849fd34c974d4e2ada,
title = "Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications",
abstract = "Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 {\%} and 27 {\%} at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.",
keywords = "BaSrTiO, Dielectric properties, Ferroelectric film, Tunable microwave device",
author = "Cho, {K. H.} and Ha, {J. Y.} and Choi, {J. W.} and Kim, {J. S.} and Yoon, {S. J.} and Chong-Yun Kang and Lee, {Y. P.}",
year = "2006",
month = "9",
day = "1",
language = "English",
volume = "49",
pages = "1076--1080",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

TY - JOUR

T1 - Characteristics of (Ba,Sr)TiO3 thin films for microwave tunable device applications

AU - Cho, K. H.

AU - Ha, J. Y.

AU - Choi, J. W.

AU - Kim, J. S.

AU - Yoon, S. J.

AU - Kang, Chong-Yun

AU - Lee, Y. P.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.

AB - Ferroelectric (Ba0.5Sr0.5)TiO3 (BST) thin films with thicknesses of 500 nm were deposited on LaAlO3 (LAO) substrates by RF magnetron sputtering at 800 °C. The BST films were characterized for structure by using X-ray diffraction (XRD). The surface morphologes and the thicknesses of BST films were characterized by using atomic force microscopy (AFM) and field-emission scanning electron microscope (FESEM), respectively. We measured the dielectric properties at microwave frequencies (1-3 GHz) by using a symmetrical stripline resonator with shorted ends at room temperature. The tunability of the as-deposited and the annealed BST films were 1 % and 27 % at a field of 40 kV/mm and values of tani of 0.0038 and 0.0050, respectively. Through a post-annealing process, we were able to improve the dielectric constant and tunability, although the dielectric loss was slightly increased. The change in the dielectric properties after annealing could be attributed to a change in the film strain.

KW - BaSrTiO

KW - Dielectric properties

KW - Ferroelectric film

KW - Tunable microwave device

UR - http://www.scopus.com/inward/record.url?scp=33749824446&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749824446&partnerID=8YFLogxK

M3 - Article

VL - 49

SP - 1076

EP - 1080

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -