Characteristics of Cu Thin Film on PET by ECR-PECVD

J. Jhin, H. Koh, J. Lee, D. Park, Dong Jin Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metallized polymers were prepared at an ambient temperature by an electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system equipped with (-)DC bias from the Cu(hfac) 2-Ar-H 2 system. Metallized polymers, and especially poly ethylene terephthalate (PET), are currently being studied and employed for microelectronic packaging, magnetic tapes, EMI shielding, etc. Copper is an attractive material for metallization thanks to its intrinsic electromigration resistance and low resistivity. For such applications, good adhesion between the polymer and the metal is required and the films should be prepared at an ambient temperature. The common techniques for the metallization of polymers are electroless plating and PVD techniques. However, for good adhesion, these techniques may need chemical etching, which may cause environmental problems. In addition, in the case of ion-beam-assisted deposition techniques, the ion beam may damage the substrate because of electronic excitation or collisional events. On the other hand, preparation of metallized polymer film by MOCVD has not been tried since high temperatures must be applied to the substrate for ionization and the activation of organometallic precursors. XRD results showed that the Cu (111) peaks were clearly observed when H 2 was introduced to the plasma. The surface morphology showed that larger Cu grains were formed in the metal-organic composite films with the introduction of H 2 to the plasma. AES depth profiles showed that H 2 gas introduction to the plasma led to the formation of copper-rich films with a homogeneous composition. Also, the sheet resistance was strongly dependent on the H 2 content of the plasma. This means that hydrogen may lead to both the formation of stable volatile organic compounds and the reduction of copper, which influences both the crystallographic structure and the composition of films. As a result, crystalline copper films with a sheet resistance of 2-3 Ω/sq. can be prepared on PET with the addition of H 2to the plasma.

Original languageEnglish
Title of host publicationIEEE International Conference on Plasma Science
Pages405
Number of pages1
Publication statusPublished - 2003
Event2003 IEEE International Conference on Plasma Science - Jeju, Korea, Republic of
Duration: 2003 Jun 22003 Jun 5

Other

Other2003 IEEE International Conference on Plasma Science
CountryKorea, Republic of
CityJeju
Period03/6/203/6/5

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Jhin, J., Koh, H., Lee, J., Park, D., & Byun, D. J. (2003). Characteristics of Cu Thin Film on PET by ECR-PECVD. In IEEE International Conference on Plasma Science (pp. 405)