Characteristics of electrically driven two-dimensional photonic crystal lasers

Hong Kyu Park, Se Heon Kim, Min Kyo Seo, Young Gu Ju, Sung Bock Kim, Yong Hee Lee

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor "wire" at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a "practical" form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.

Original languageEnglish
Pages (from-to)1131-1141
Number of pages11
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number9
DOIs
Publication statusPublished - 2005 Sep 1
Externally publishedYes

Fingerprint

Photonic crystals
photonics
Lasers
crystals
lasers
lasing
Semiconductor materials
Spontaneous emission
Electrodynamics
cavities
Photonics
Integrated circuits
quantum electrodynamics
cells
threshold currents
Photons
spontaneous emission
Doping (additives)
Wire
integrated circuits

Keywords

  • Current injection
  • Finite-difference time-domain (FDTD)
  • Microcavity
  • Photonic band gap
  • Semiconductor laser
  • Single photon source
  • Spontaneous emission factor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characteristics of electrically driven two-dimensional photonic crystal lasers. / Park, Hong Kyu; Kim, Se Heon; Seo, Min Kyo; Ju, Young Gu; Kim, Sung Bock; Lee, Yong Hee.

In: IEEE Journal of Quantum Electronics, Vol. 41, No. 9, 01.09.2005, p. 1131-1141.

Research output: Contribution to journalArticle

Park, Hong Kyu ; Kim, Se Heon ; Seo, Min Kyo ; Ju, Young Gu ; Kim, Sung Bock ; Lee, Yong Hee. / Characteristics of electrically driven two-dimensional photonic crystal lasers. In: IEEE Journal of Quantum Electronics. 2005 ; Vol. 41, No. 9. pp. 1131-1141.
@article{9b3990e173c74b16a46249430c1cf3ec,
title = "Characteristics of electrically driven two-dimensional photonic crystal lasers",
abstract = "We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor {"}wire{"} at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a {"}practical{"} form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.",
keywords = "Current injection, Finite-difference time-domain (FDTD), Microcavity, Photonic band gap, Semiconductor laser, Single photon source, Spontaneous emission factor",
author = "Park, {Hong Kyu} and Kim, {Se Heon} and Seo, {Min Kyo} and Ju, {Young Gu} and Kim, {Sung Bock} and Lee, {Yong Hee}",
year = "2005",
month = "9",
day = "1",
doi = "10.1109/JQE.2005.852800",
language = "English",
volume = "41",
pages = "1131--1141",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Characteristics of electrically driven two-dimensional photonic crystal lasers

AU - Park, Hong Kyu

AU - Kim, Se Heon

AU - Seo, Min Kyo

AU - Ju, Young Gu

AU - Kim, Sung Bock

AU - Lee, Yong Hee

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor "wire" at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a "practical" form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.

AB - We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor "wire" at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a "practical" form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.

KW - Current injection

KW - Finite-difference time-domain (FDTD)

KW - Microcavity

KW - Photonic band gap

KW - Semiconductor laser

KW - Single photon source

KW - Spontaneous emission factor

UR - http://www.scopus.com/inward/record.url?scp=24744457119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24744457119&partnerID=8YFLogxK

U2 - 10.1109/JQE.2005.852800

DO - 10.1109/JQE.2005.852800

M3 - Article

VL - 41

SP - 1131

EP - 1141

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 9

ER -