Characteristics of ferroelectric Pb(Zr1-xTix)O3 thin film capacitors deposited on PtRhOy electrode barriers

Kwangbae Lee, Kyung Haeng Lee, Byung Kwon Ju

Research output: Contribution to conferencePaperpeer-review

Abstract

We present the feasibility of single-layer PtRhOy thin films as electrode barriers for ferroelectric Pb(Zr1-xTix)O3 (PZT) (x = 0.2 to 0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-saturated P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the shape of P-E hysteresis loops and the behaviors of the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22 μC/cm2 and 87 kV/cm, respectively, and the polarization loss was only less than 5 % after 1011 switching repetitions. The chemical binding states of PtRhOy films affected mainly the shape of P-E hysteresis loops. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layer PtRhOx films behaved as high quality electrode barriers for PZT thin film capacitors.

Original languageEnglish
Pages141-146
Number of pages6
Publication statusPublished - 2002
Externally publishedYes
EventProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan
Duration: 2002 May 282002 Jun 1

Other

OtherProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics
CountryJapan
CityNara
Period02/5/2802/6/1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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