Characteristics of ferroelectric Pb(Zr1-xTix)O3 thin film capacitors deposited on PtRhOy electrode barriers

Kwangbae Lee, Kyung Haeng Lee, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the feasibility of single-layer PtRhOy thin films as electrode barriers for ferroelectric Pb(Zr1-xTix)O3 (PZT) (x = 0.2 to 0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-saturated P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the shape of P-E hysteresis loops and the behaviors of the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22 μC/cm2 and 87 kV/cm, respectively, and the polarization loss was only less than 5 % after 1011 switching repetitions. The chemical binding states of PtRhOy films affected mainly the shape of P-E hysteresis loops. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layer PtRhOx films behaved as high quality electrode barriers for PZT thin film capacitors.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsG. White, T. Tsurumi
Pages141-146
Number of pages6
Publication statusPublished - 2002 Dec 1
Externally publishedYes
EventProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan
Duration: 2002 May 282002 Jun 1

Other

OtherProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics
CountryJapan
CityNara
Period02/5/2802/6/1

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Lee, K., Lee, K. H., & Ju, B. K. (2002). Characteristics of ferroelectric Pb(Zr1-xTix)O3 thin film capacitors deposited on PtRhOy electrode barriers. In G. White, & T. Tsurumi (Eds.), IEEE International Symposium on Applications of Ferroelectrics (pp. 141-146)