Abstract
We present the feasibility of single-layer PtRhOy thin films as electrode barriers for ferroelectric Pb(Zr1-xTix)O3 (PZT) (x = 0.2 to 0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-saturated P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the shape of P-E hysteresis loops and the behaviors of the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22 μC/cm2 and 87 kV/cm, respectively, and the polarization loss was only less than 5 % after 1011 switching repetitions. The chemical binding states of PtRhOy films affected mainly the shape of P-E hysteresis loops. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layer PtRhOx films behaved as high quality electrode barriers for PZT thin film capacitors.
| Original language | English |
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| Pages | 141-146 |
| Number of pages | 6 |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan Duration: 2002 May 28 → 2002 Jun 1 |
Other
| Other | Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics |
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| Country/Territory | Japan |
| City | Nara |
| Period | 02/5/28 → 02/6/1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering