Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin, S. D. Lee, K. P. Lee, S. Y. Park, Dong Hoon Choi, N. Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

Original languageEnglish
Pages (from-to)2263-2264
Number of pages2
JournalSynthetic Metals
Volume71
Issue number1-3
Publication statusPublished - 1995 Apr 1
Externally publishedYes

Fingerprint

Plasma polymerization
Thiophenes
Thiophene
Silicon
thiophenes
Heterojunctions
heterojunctions
polymerization
Semiconducting films
semiconducting films
heterojunction devices
Plasmas
silicon
Polymers
coatings
Thin films
Coatings
conductivity
polymers
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics

Cite this

Shin, D. H., Lee, S. D., Lee, K. P., Park, S. Y., Choi, D. H., & Kim, N. (1995). Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. Synthetic Metals, 71(1-3), 2263-2264.

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. / Shin, D. H.; Lee, S. D.; Lee, K. P.; Park, S. Y.; Choi, Dong Hoon; Kim, N.

In: Synthetic Metals, Vol. 71, No. 1-3, 01.04.1995, p. 2263-2264.

Research output: Contribution to journalArticle

Shin, DH, Lee, SD, Lee, KP, Park, SY, Choi, DH & Kim, N 1995, 'Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon', Synthetic Metals, vol. 71, no. 1-3, pp. 2263-2264.
Shin, D. H. ; Lee, S. D. ; Lee, K. P. ; Park, S. Y. ; Choi, Dong Hoon ; Kim, N. / Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. In: Synthetic Metals. 1995 ; Vol. 71, No. 1-3. pp. 2263-2264.
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