Abstract
Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 2263-2264 |
| Number of pages | 2 |
| Journal | Synthetic Metals |
| Volume | 71 |
| Issue number | 1-3 |
| Publication status | Published - 1995 Apr 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Metals and Alloys
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Mechanical Engineering
- Polymers and Plastics
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Shin, D. H., Lee, S. D., Lee, K. P., Park, S. Y., Choi, D. H., & Kim, N. (1995). Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. Synthetic Metals, 71(1-3), 2263-2264.