Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin; S. D. Lee; K. P. Lee; S. Y. Park; D. H. Choi; N. Kim

doi:10.1016/0379-6779(94)03251-Z

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin, S. D. Lee, K. P. Lee, S. Y. Park, D. H. Choi, N. Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Thin semiconducting film of 10^-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

Original language	English
Pages (from-to)	2263-2264
Number of pages	2
Journal	Synthetic Metals
Volume	71
Issue number	1-3
DOIs	https://doi.org/10.1016/0379-6779(94)03251-Z
Publication status	Published - 1995 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0379-6779(94)03251-Z

Fingerprint Dive into the research topics of 'Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon'. Together they form a unique fingerprint.

Cite this

@article{7959f2c9fbd9466ab25a97044185f3b8,

title = "Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon",

abstract = "Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.",

author = "Shin, {D. H.} and Lee, {S. D.} and Lee, {K. P.} and Park, {S. Y.} and Choi, {D. H.} and N. Kim",

year = "1995",

month = apr,

day = "1",

doi = "10.1016/0379-6779(94)03251-Z",

language = "English",

volume = "71",

pages = "2263--2264",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

AU - Shin, D. H.

AU - Lee, S. D.

AU - Lee, K. P.

AU - Park, S. Y.

AU - Choi, D. H.

AU - Kim, N.

PY - 1995/4/1

Y1 - 1995/4/1

N2 - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

AB - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0029291693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029291693&partnerID=8YFLogxK

U2 - 10.1016/0379-6779(94)03251-Z

DO - 10.1016/0379-6779(94)03251-Z

M3 - Article

AN - SCOPUS:0029291693

VL - 71

SP - 2263

EP - 2264

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this