Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin; S. D. Lee; K. P. Lee; S. Y. Park; D. H. Choi; N. Kim

doi:10.1016/0379-6779(94)03251-Z

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin, S. D. Lee, K. P. Lee, S. Y. Park, D. H. Choi, N. Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Thin semiconducting film of 10^-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

Original language	English
Pages (from-to)	2263-2264
Number of pages	2
Journal	Synthetic Metals
Volume	71
Issue number	1-3
DOIs	https://doi.org/10.1016/0379-6779(94)03251-Z
Publication status	Published - 1995 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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abstract = "Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.",

author = "Shin, {D. H.} and Lee, {S. D.} and Lee, {K. P.} and Park, {S. Y.} and Choi, {D. H.} and N. Kim",

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AU - Choi, D. H.

AU - Kim, N.

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AB - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

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