Abstract
Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
Original language | English |
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Pages (from-to) | 2263-2264 |
Number of pages | 2 |
Journal | Synthetic Metals |
Volume | 71 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1995 Apr 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry