Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin, S. D. Lee, K. P. Lee, S. Y. Park, Dong Hoon Choi, N. Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

Original languageEnglish
Pages (from-to)2263-2264
Number of pages2
JournalSynthetic Metals
Volume71
Issue number1-3
Publication statusPublished - 1995 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics

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  • Cite this

    Shin, D. H., Lee, S. D., Lee, K. P., Park, S. Y., Choi, D. H., & Kim, N. (1995). Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. Synthetic Metals, 71(1-3), 2263-2264.