Abstract
Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 2263-2264 |
| Number of pages | 2 |
| Journal | Synthetic Metals |
| Volume | 71 |
| Issue number | 1-3 |
| Publication status | Published - 1995 Apr 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Metals and Alloys
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Mechanical Engineering
- Polymers and Plastics
Cite this
Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon. / Shin, D. H.; Lee, S. D.; Lee, K. P.; Park, S. Y.; Choi, Dong Hoon; Kim, N.
In: Synthetic Metals, Vol. 71, No. 1-3, 01.04.1995, p. 2263-2264.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon
AU - Shin, D. H.
AU - Lee, S. D.
AU - Lee, K. P.
AU - Park, S. Y.
AU - Choi, Dong Hoon
AU - Kim, N.
PY - 1995/4/1
Y1 - 1995/4/1
N2 - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
AB - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=0029291693&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029291693&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0029291693
VL - 71
SP - 2263
EP - 2264
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 1-3
ER -