Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Seung Wan Chae, Joon Seop Kwak, Suk Kil Yoon, Mi Yang Kim, June O. Song, Tae Yeon Seong, Tae Geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

Original languageEnglish
Pages (from-to)899-902
Number of pages4
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

    Fingerprint

Keywords

  • GaN
  • Hydrogen storage material
  • LED
  • Nitride
  • Schottky barrier
  • ZnNi
  • p-GaN ohmic

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this