Abstract
We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.
| Original language | English |
|---|---|
| Pages (from-to) | 899-902 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 49 |
| Issue number | 3 |
| Publication status | Published - 2006 Sep 1 |
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Keywords
- GaN
- Hydrogen storage material
- LED
- Nitride
- p-GaN ohmic
- Schottky barrier
- ZnNi
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs. / Chae, Seung Wan; Kwak, Joon Seop; Yoon, Suk Kil; Kim, Mi Yang; Song, June O.; Seong, Tae Yeon; Kim, Tae Geun.
In: Journal of the Korean Physical Society, Vol. 49, No. 3, 01.09.2006, p. 899-902.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs
AU - Chae, Seung Wan
AU - Kwak, Joon Seop
AU - Yoon, Suk Kil
AU - Kim, Mi Yang
AU - Song, June O.
AU - Seong, Tae Yeon
AU - Kim, Tae Geun
PY - 2006/9/1
Y1 - 2006/9/1
N2 - We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.
AB - We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.
KW - GaN
KW - Hydrogen storage material
KW - LED
KW - Nitride
KW - p-GaN ohmic
KW - Schottky barrier
KW - ZnNi
UR - http://www.scopus.com/inward/record.url?scp=33749845352&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749845352&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33749845352
VL - 49
SP - 899
EP - 902
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 3
ER -