Abstract
We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.
Original language | English |
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Pages (from-to) | 899-902 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | 3 |
Publication status | Published - 2006 Sep |
Keywords
- GaN
- Hydrogen storage material
- LED
- Nitride
- Schottky barrier
- ZnNi
- p-GaN ohmic
ASJC Scopus subject areas
- Physics and Astronomy(all)