Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Seung Wan Chae, Joon Seop Kwak, Suk Kil Yoon, Mi Yang Kim, June O. Song, Tae Yeon Seong, Tae Geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

Original languageEnglish
Pages (from-to)899-902
Number of pages4
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

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electric contacts
light emitting diodes
electrodes
hydrogen
quantum wells
optical properties
electric potential

Keywords

  • GaN
  • Hydrogen storage material
  • LED
  • Nitride
  • p-GaN ohmic
  • Schottky barrier
  • ZnNi

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs. / Chae, Seung Wan; Kwak, Joon Seop; Yoon, Suk Kil; Kim, Mi Yang; Song, June O.; Seong, Tae Yeon; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 49, No. 3, 01.09.2006, p. 899-902.

Research output: Contribution to journalArticle

Chae, Seung Wan ; Kwak, Joon Seop ; Yoon, Suk Kil ; Kim, Mi Yang ; Song, June O. ; Seong, Tae Yeon ; Kim, Tae Geun. / Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs. In: Journal of the Korean Physical Society. 2006 ; Vol. 49, No. 3. pp. 899-902.
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AU - Song, June O.

AU - Seong, Tae Yeon

AU - Kim, Tae Geun

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AB - We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

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