Abstract
We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.
| Original language | English |
|---|---|
| Pages (from-to) | 899-902 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 49 |
| Issue number | 3 |
| Publication status | Published - 2006 Sep 1 |
Fingerprint
Keywords
- GaN
- Hydrogen storage material
- LED
- Nitride
- Schottky barrier
- ZnNi
- p-GaN ohmic
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Chae, S. W., Kwak, J. S., Yoon, S. K., Kim, M. Y., Song, J. O., Seong, T. Y., & Kim, T. G. (2006). Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs. Journal of the Korean Physical Society, 49(3), 899-902.