Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Seung Wan Chae; Joon Seop Kwak; Suk Kil Yoon; Mi Yang Kim; June O. Song; Tae Yeon Seong; Tae Geun Kim

Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Seung Wan Chae, Joon Seop Kwak, Suk Kil Yoon, Mi Yang Kim, June O. Song, Tae Yeon Seong, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

Abstract

We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

Original language	English
Pages (from-to)	899-902
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	3
Publication status	Published - 2006 Sep

Keywords

GaN
Hydrogen storage material
LED
Nitride
Schottky barrier
ZnNi
p-GaN ohmic

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{d8b071bd3a954c96b58f50a445681897,

title = "Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs",

abstract = "We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.",

keywords = "GaN, Hydrogen storage material, LED, Nitride, Schottky barrier, ZnNi, p-GaN ohmic",

author = "Chae, {Seung Wan} and Kwak, {Joon Seop} and Yoon, {Suk Kil} and Kim, {Mi Yang} and Song, {June O.} and Seong, {Tae Yeon} and Kim, {Tae Geun}",

year = "2006",

month = sep,

language = "English",

volume = "49",

pages = "899--902",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

AU - Chae, Seung Wan

AU - Kwak, Joon Seop

AU - Yoon, Suk Kil

AU - Kim, Mi Yang

AU - Song, June O.

AU - Seong, Tae Yeon

AU - Kim, Tae Geun

PY - 2006/9

Y1 - 2006/9

N2 - We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

AB - We report the electrical and the optical properties of ZnNi/Au electrodes and compare them to those of Ni/Au electrodes. From the experiment and a systematic analysis using fabricated InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with ZnNi/Au (5 nm/5 nm) electrodes, the forward voltage with ZnNi/Au was compared with the values of 3.45 V and 22 mW, respectively for Ni/Au under the same conditions. We attribute this to both the reduced barrier height of p-type GaN and the enhanced mobility of Mg-doped GaN, due to hydrogen absorption by ZnNi.

KW - GaN

KW - Hydrogen storage material

KW - LED

KW - Nitride

KW - Schottky barrier

KW - ZnNi

KW - p-GaN ohmic

UR - http://www.scopus.com/inward/record.url?scp=33749845352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749845352&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33749845352

VL - 49

SP - 899

EP - 902

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -

Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Abstract

Keywords

ASJC Scopus subject areas

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