Characteristics of InxGa1 - xN/GaN grown by LPMOVPE with the variation of growth temperature

Cheul Ro Lee, Sung Jin Son, In-Hwan Lee, Jae Young Leem, Sam Kyu Noh

Research output: Contribution to journalArticle

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Abstract

We have studied the growth of InxGa1 - xN/GaN on (0 0 0 1) sapphire substrates. The films were grown in a horizontal MOVPE reactor at the reduced pressure of 100 Torr. In composition, x in InxGa1 - xN/GaN grown at 810°C determined by the DCXRD is 0.08 and 0.13 for 770°C. The FWHMs of the DCXRD for (0 0 0 2) diffraction from the In0.08Ga0.92N and In0.13Ga0.87N are 11 arcmin and 9 arcmin, respectively, whose difference is considered to be resulted from In dissociation. In addition, we confirmed that the thermal pit density of In0.08Ga0.92N was higher than that of In0.13Ga0.87N with the SEM observation. The carrier concentration and mobility of In0.08Ga0.92N are 3 × 1018/cm3 and 47 cm2/V s, and those of In0.13Ga0.87N are 9 × 1018/cm3 and 70 cm2/V s, respectively. In spite of the lower carrier concentration, the mobility of In0.08Ga0.92N is lower than that of In0.13Ga0.87N, which is considered to be due to the higher defect density of In0.08Ga0.92N than that of In0.13Ga0.87N as can be seen from the result of DCXRD. The FWHMs of band-edge emission peak measured by PL at room temperature were 110 meV at 395 nm for In0.08Ga0.92N and 120 meV at 410 nm for In0.13Ga0.87N. The In composition in InGaN increased as the growth temperature decreased, and In was still dissociated at 770°C. Some high-quality InGaN films were grown on GaN films compared with the recent results of others.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalJournal of Crystal Growth
Volume182
Issue number1-2
DOIs
Publication statusPublished - 1997 Jan 1

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Growth temperature
Full width at half maximum
Carrier concentration
Metallorganic vapor phase epitaxy
Aluminum Oxide
Defect density
Carrier mobility
Chemical analysis
Sapphire
temperature
sapphire
Diffraction
reactors
dissociation
Scanning electron microscopy
scanning electron microscopy
defects
room temperature
Substrates
diffraction

Keywords

  • GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Characteristics of InxGa1 - xN/GaN grown by LPMOVPE with the variation of growth temperature. / Lee, Cheul Ro; Son, Sung Jin; Lee, In-Hwan; Leem, Jae Young; Noh, Sam Kyu.

In: Journal of Crystal Growth, Vol. 182, No. 1-2, 01.01.1997, p. 6-10.

Research output: Contribution to journalArticle

Lee, Cheul Ro ; Son, Sung Jin ; Lee, In-Hwan ; Leem, Jae Young ; Noh, Sam Kyu. / Characteristics of InxGa1 - xN/GaN grown by LPMOVPE with the variation of growth temperature. In: Journal of Crystal Growth. 1997 ; Vol. 182, No. 1-2. pp. 6-10.
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T1 - Characteristics of InxGa1 - xN/GaN grown by LPMOVPE with the variation of growth temperature

AU - Lee, Cheul Ro

AU - Son, Sung Jin

AU - Lee, In-Hwan

AU - Leem, Jae Young

AU - Noh, Sam Kyu

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AB - We have studied the growth of InxGa1 - xN/GaN on (0 0 0 1) sapphire substrates. The films were grown in a horizontal MOVPE reactor at the reduced pressure of 100 Torr. In composition, x in InxGa1 - xN/GaN grown at 810°C determined by the DCXRD is 0.08 and 0.13 for 770°C. The FWHMs of the DCXRD for (0 0 0 2) diffraction from the In0.08Ga0.92N and In0.13Ga0.87N are 11 arcmin and 9 arcmin, respectively, whose difference is considered to be resulted from In dissociation. In addition, we confirmed that the thermal pit density of In0.08Ga0.92N was higher than that of In0.13Ga0.87N with the SEM observation. The carrier concentration and mobility of In0.08Ga0.92N are 3 × 1018/cm3 and 47 cm2/V s, and those of In0.13Ga0.87N are 9 × 1018/cm3 and 70 cm2/V s, respectively. In spite of the lower carrier concentration, the mobility of In0.08Ga0.92N is lower than that of In0.13Ga0.87N, which is considered to be due to the higher defect density of In0.08Ga0.92N than that of In0.13Ga0.87N as can be seen from the result of DCXRD. The FWHMs of band-edge emission peak measured by PL at room temperature were 110 meV at 395 nm for In0.08Ga0.92N and 120 meV at 410 nm for In0.13Ga0.87N. The In composition in InGaN increased as the growth temperature decreased, and In was still dissociated at 770°C. Some high-quality InGaN films were grown on GaN films compared with the recent results of others.

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