Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

B. S. Chun, Young-geun Kim, J. Y. Hwang, H. I. Yim, J. R. Rhee, T. W. Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.

Original languageEnglish
Pages (from-to)1929-1931
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

Keywords

  • Amorphous magnetic material
  • Magnetic tunnel junctions
  • Sensitivity
  • Switching field
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics

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