Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers

Byong Sun Chun, Seong Rae Lee, Young-geun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A study to investigate the magnetic tunnel junctions comprising amorphous CoNbZr layers was presented. The Co85.5Nb8Zr6.5 layers were used to substitute Ta layers with an emphasis given on understanding underlayer effect. The CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayered one for both as-deposited state and after annealing. It was observed that the tunneling magnetoresistance ratio can be increased up to 32% after 10 minute annealing at 300°C by a slight change in the bottom electrode thickness.

Original languageEnglish
Pages (from-to)8361-8363
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
Publication statusPublished - 2003 May 15

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tunnel junctions
annealing
tunnels
substitutes
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers. / Chun, Byong Sun; Lee, Seong Rae; Kim, Young-geun.

In: Journal of Applied Physics, Vol. 93, No. 10 3, 15.05.2003, p. 8361-8363.

Research output: Contribution to journalArticle

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