Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers

Byong Sun Chun, Seong Rae Lee, Young Keun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A study to investigate the magnetic tunnel junctions comprising amorphous CoNbZr layers was presented. The Co85.5Nb8Zr6.5 layers were used to substitute Ta layers with an emphasis given on understanding underlayer effect. The CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayered one for both as-deposited state and after annealing. It was observed that the tunneling magnetoresistance ratio can be increased up to 32% after 10 minute annealing at 300°C by a slight change in the bottom electrode thickness.

Original languageEnglish
Pages (from-to)8361-8363
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
Publication statusPublished - 2003 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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