A study to investigate the magnetic tunnel junctions comprising amorphous CoNbZr layers was presented. The Co85.5Nb8Zr6.5 layers were used to substitute Ta layers with an emphasis given on understanding underlayer effect. The CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayered one for both as-deposited state and after annealing. It was observed that the tunneling magnetoresistance ratio can be increased up to 32% after 10 minute annealing at 300°C by a slight change in the bottom electrode thickness.
ASJC Scopus subject areas
- Physics and Astronomy(all)