Characteristics of MgO/GaN gate-controlled metal-oxide- semiconductor diodes

Jihyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

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Abstract

Gate-controlled n+p metal-oxide-semiconductor diodes were fabricated in p-GaN using MgO as a gate dielectric and Si+ implantation to create the n+ regions. This structure overcomes the low minority carrier generation rate in GaN and allowed observation of clear inversion behavior in the dark at room temperature. By contrast, diodes without the n+ regions to act as an external source of minority carriers did not show inversion even at measurement temperatures of 300°C. The gated diodes showed the expected shape of the current-voltage characteristics, with clear regions corresponding to depletion and inversion under the gate. The MgO was deposited prior to the Si implantation and was stable during the activation annealing for the Si-implanted n+ regions.

Original languageEnglish
Pages (from-to)4555-4557
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number24
DOIs
Publication statusPublished - 2002 Jun 17
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J., Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., & Irokawa, Y. (2002). Characteristics of MgO/GaN gate-controlled metal-oxide- semiconductor diodes. Applied Physics Letters, 80(24), 4555-4557. https://doi.org/10.1063/1.1487903