Abstract
In this work, we fabricated thin-film electroluminescent (TFEL) cells with a new multilayered BaTiO 3 layer for the low-voltage-driven devices. At first, we performed the voltage accelerated breakdown testing of the multilayered BaTiO 3 having both high dielectric constant and high breakdown strength. The time-zero-breakdown distribution is shown to be dependent on surface roughness, while the long-term failure studied by time-dependent dielectric breakdown technique at high field is dependent on the bulk characteristics, i.e., transition layer within multilayered BaTiO 3 (m-BT) films. Second, the TFEL devices were prepared using the multilayered BaTiO 3 as dielectric materials. We observed a decrease of turn-on voltage with increasing thickness and increase of the maximum overvoltage. Third, typical symmetric capacitance-voltage and internal charge-phosphor field characteristics were obtained for the device with thin m-BT layers. With increasing thickness of m-BT the significant asymmetry with respect to the applied voltage polarity was observed. This is a main difference as compared with the symmetric characteristics of conventional TFEL devices with low dielectric constant insulators. The experimental results indicate that a selection of the thickness of upper m-BT and their deposition process would strongly affect the interfacial characteristics as well as bulk characteristics of an as-grown ZnS:Pr,Ce layer.
| Original language | English |
|---|---|
| Pages (from-to) | 4374-4378 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 147 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2000 Nov 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Characteristics of multilayered barium titanate films and their effect on thin-film electroluminescent cells. / Lee, Yun-Hi; Oh, Jung Hoon; Ju, Byeong Kwon; Oh, Myung Hwan.
In: Journal of the Electrochemical Society, Vol. 147, No. 11, 01.11.2000, p. 4374-4378.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of multilayered barium titanate films and their effect on thin-film electroluminescent cells
AU - Lee, Yun-Hi
AU - Oh, Jung Hoon
AU - Ju, Byeong Kwon
AU - Oh, Myung Hwan
PY - 2000/11/1
Y1 - 2000/11/1
N2 - In this work, we fabricated thin-film electroluminescent (TFEL) cells with a new multilayered BaTiO 3 layer for the low-voltage-driven devices. At first, we performed the voltage accelerated breakdown testing of the multilayered BaTiO 3 having both high dielectric constant and high breakdown strength. The time-zero-breakdown distribution is shown to be dependent on surface roughness, while the long-term failure studied by time-dependent dielectric breakdown technique at high field is dependent on the bulk characteristics, i.e., transition layer within multilayered BaTiO 3 (m-BT) films. Second, the TFEL devices were prepared using the multilayered BaTiO 3 as dielectric materials. We observed a decrease of turn-on voltage with increasing thickness and increase of the maximum overvoltage. Third, typical symmetric capacitance-voltage and internal charge-phosphor field characteristics were obtained for the device with thin m-BT layers. With increasing thickness of m-BT the significant asymmetry with respect to the applied voltage polarity was observed. This is a main difference as compared with the symmetric characteristics of conventional TFEL devices with low dielectric constant insulators. The experimental results indicate that a selection of the thickness of upper m-BT and their deposition process would strongly affect the interfacial characteristics as well as bulk characteristics of an as-grown ZnS:Pr,Ce layer.
AB - In this work, we fabricated thin-film electroluminescent (TFEL) cells with a new multilayered BaTiO 3 layer for the low-voltage-driven devices. At first, we performed the voltage accelerated breakdown testing of the multilayered BaTiO 3 having both high dielectric constant and high breakdown strength. The time-zero-breakdown distribution is shown to be dependent on surface roughness, while the long-term failure studied by time-dependent dielectric breakdown technique at high field is dependent on the bulk characteristics, i.e., transition layer within multilayered BaTiO 3 (m-BT) films. Second, the TFEL devices were prepared using the multilayered BaTiO 3 as dielectric materials. We observed a decrease of turn-on voltage with increasing thickness and increase of the maximum overvoltage. Third, typical symmetric capacitance-voltage and internal charge-phosphor field characteristics were obtained for the device with thin m-BT layers. With increasing thickness of m-BT the significant asymmetry with respect to the applied voltage polarity was observed. This is a main difference as compared with the symmetric characteristics of conventional TFEL devices with low dielectric constant insulators. The experimental results indicate that a selection of the thickness of upper m-BT and their deposition process would strongly affect the interfacial characteristics as well as bulk characteristics of an as-grown ZnS:Pr,Ce layer.
UR - http://www.scopus.com/inward/record.url?scp=0034323180&partnerID=8YFLogxK
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U2 - 10.1149/1.1394072
DO - 10.1149/1.1394072
M3 - Article
VL - 147
SP - 4374
EP - 4378
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 11
ER -