Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Yong Han, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 104 as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 102 cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.

Original languageEnglish
Pages (from-to)2608-2610
Number of pages3
JournalMicroelectronic Engineering
Volume88
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

ITO (semiconductors)
low resistance
high resistance
Glass
glass
Electric potential
electric potential
cycles

Keywords

  • Multilevel
  • ReRAM
  • Resistive switching
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass. / Han, Yong; Cho, Kyoungah; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 88, No. 8, 01.08.2011, p. 2608-2610.

Research output: Contribution to journalArticle

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