The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics