Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers

Sang Ho Kim, Han Ki Kim, Seong Wook Jeong, Tae Yeon Seong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.

Original languageEnglish
Pages (from-to)211-217
Number of pages7
JournalSuperlattices and Microstructures
Volume39
Issue number1-4
DOIs
Publication statusPublished - 2006 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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