Zinc oxide and tin oxide (ZnSnOx) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnOx (or SnOx-ZnO) of high mobility films exhibited c.a. 7.0×10-3 ohm · cm of electrical resistivity.
|Number of pages||4|
|Journal||Advanced Materials Research|
|Publication status||Published - 2007 Dec 1|
- Electrical resistivity
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