Characteristics of Superluminescent Diodes Utilizing In 0.5Ga0.5As Quantum Dots

Du Chang Heo, Song Jin Dong, Won Jun Choi, Jung Il Lee, Jichai Jeong, Il Ki Han

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 × 1010cm-2. The output power and spectral width of the SLD using these three-stacked QDs are 0. 9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.

Original languageEnglish
Pages (from-to)5133-5134
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number8
Publication statusPublished - 2003 Aug 1

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Keywords

  • Light emitting diodes
  • Quantum dot
  • Short-period superlattice
  • Superluminescent diodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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