Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin; Jaewoo Shim; Jongtaek Lee; Seung Ha Choi; Woo Shik Jung; Hyun Yong Yu; Yonghan Roh; Jin Hong Park

doi:10.1109/LED.2012.2210992

Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin, Jaewoo Shim, Jongtaek Lee, Seung Ha Choi, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

Original language	English
Article number	6296680
Pages (from-to)	1363-1365
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210992
Publication status	Published - 2012

Keywords

Germanium (Ge)
heterojunction
indium-gallium-zinc-oxide (IGZO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2210992

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title = "Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction",

abstract = "In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.",

keywords = "Germanium (Ge), heterojunction, indium-gallium-zinc-oxide (IGZO)",

author = "Juhyeon Shin and Jaewoo Shim and Jongtaek Lee and Choi, {Seung Ha} and Jung, {Woo Shik} and Yu, {Hyun Yong} and Yonghan Roh and Park, {Jin Hong}",

note = "Funding Information: Manuscript received July 9, 2012; accepted July 25, 2012. Date of publication September 6, 2012; date of current version September 21, 2012. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under NRF-2012-0003218 and in part by the International Collaborative R&D Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy of the Korean Government under Grant 2011-8520010030. The review of this letter was arranged by Editor O. Manasreh.",

year = "2012",

doi = "10.1109/LED.2012.2210992",

language = "English",

volume = "33",

pages = "1363--1365",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Shin, Juhyeon

AU - Shim, Jaewoo

AU - Lee, Jongtaek

AU - Choi, Seung Ha

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Roh, Yonghan

AU - Park, Jin Hong

N1 - Funding Information: Manuscript received July 9, 2012; accepted July 25, 2012. Date of publication September 6, 2012; date of current version September 21, 2012. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under NRF-2012-0003218 and in part by the International Collaborative R&D Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy of the Korean Government under Grant 2011-8520010030. The review of this letter was arranged by Editor O. Manasreh.

PY - 2012

Y1 - 2012

N2 - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

AB - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

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Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

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Keywords

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