Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin, Jaewoo Shim, Jongtaek Lee, Seung Ha Choi, Woo Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin Hong Park

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2 Citations (Scopus)

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

Original languageEnglish
Article number6296680
Pages (from-to)1363-1365
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
Publication statusPublished - 2012 Sep 12

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Keywords

  • Germanium (Ge)
  • heterojunction
  • indium-gallium-zinc-oxide (IGZO)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shin, J., Shim, J., Lee, J., Choi, S. H., Jung, W. S., Yu, H-Y., ... Park, J. H. (2012). Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction. IEEE Electron Device Letters, 33(10), 1363-1365. [6296680]. https://doi.org/10.1109/LED.2012.2210992