Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin; Jaewoo Shim; Jongtaek Lee; Seung Ha Choi; Woo Shik Jung; Hyun-Yong Yu; Yonghan Roh; Jin Hong Park

doi:10.1109/LED.2012.2210992

Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin, Jaewoo Shim, Jongtaek Lee, Seung Ha Choi, Woo Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

Original language	English
Article number	6296680
Pages (from-to)	1363-1365
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210992
Publication status	Published - 2012 Sep 12

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Keywords

Germanium (Ge)
heterojunction
indium-gallium-zinc-oxide (IGZO)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Shin, J., Shim, J., Lee, J., Choi, S. H., Jung, W. S., Yu, H-Y., ... Park, J. H. (2012). Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction. IEEE Electron Device Letters, 33(10), 1363-1365. [6296680]. https://doi.org/10.1109/LED.2012.2210992

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abstract = "In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.",

keywords = "Germanium (Ge), heterojunction, indium-gallium-zinc-oxide (IGZO)",

author = "Juhyeon Shin and Jaewoo Shim and Jongtaek Lee and Choi, {Seung Ha} and Jung, {Woo Shik} and Hyun-Yong Yu and Yonghan Roh and Park, {Jin Hong}",

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AU - Shin, Juhyeon

AU - Shim, Jaewoo

AU - Lee, Jongtaek

AU - Choi, Seung Ha

AU - Jung, Woo Shik

AU - Yu, Hyun-Yong

AU - Roh, Yonghan

AU - Park, Jin Hong

PY - 2012/9/12

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AB - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

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KW - heterojunction

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Access to Document

10.1109/LED.2012.2210992