@article{9b8aee120d4940169a1e49afb2b9fe98,
title = "Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction",
abstract = "In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.",
keywords = "Germanium (Ge), heterojunction, indium-gallium-zinc-oxide (IGZO)",
author = "Juhyeon Shin and Jaewoo Shim and Jongtaek Lee and Choi, {Seung Ha} and Jung, {Woo Shik} and Yu, {Hyun Yong} and Yonghan Roh and Park, {Jin Hong}",
note = "Funding Information: DOM Innovation Fund, Department of Medicine, Queen?s University Funding Information: is study was supported by the Institute for Clinical Evalua - tive Sciences (ICES), which is funded by an annual grant from the Ontario Ministry of Health and Long-Term Care (MOHLTC). e opinions, results and conclusions reported in this paper are those of the authors and are independent from the funding sources. No endorsement by ICES or the Ontario MOHLTC is intended or should be inferred. ese datasets were linked using unique encoded identiers and analyzed at the Institute for Clinical Evaluative Sciences (ICES). Parts of this material are based on data and information compiled and provided by CIHI; however, the analyses, conclusions, opinions and statements expressed herein are those of the authour, and not necessarily those of CIHI. is study was approved by the institutional review board at Sunnybrook Health Sciences Centre, Toronto, Canada and at ueen{\textquoteright}s University, Kingston, Ontario, Canada.",
year = "2012",
doi = "10.1109/LED.2012.2210992",
language = "English",
volume = "33",
pages = "1363--1365",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}