Abstract
In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.
| Original language | English |
|---|---|
| Article number | 6296680 |
| Pages (from-to) | 1363-1365 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 Sep 12 |
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Keywords
- Germanium (Ge)
- heterojunction
- indium-gallium-zinc-oxide (IGZO)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction. / Shin, Juhyeon; Shim, Jaewoo; Lee, Jongtaek; Choi, Seung Ha; Jung, Woo Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin Hong.
In: IEEE Electron Device Letters, Vol. 33, No. 10, 6296680, 12.09.2012, p. 1363-1365.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction
AU - Shin, Juhyeon
AU - Shim, Jaewoo
AU - Lee, Jongtaek
AU - Choi, Seung Ha
AU - Jung, Woo Shik
AU - Yu, Hyun-Yong
AU - Roh, Yonghan
AU - Park, Jin Hong
PY - 2012/9/12
Y1 - 2012/9/12
N2 - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.
AB - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.
KW - Germanium (Ge)
KW - heterojunction
KW - indium-gallium-zinc-oxide (IGZO)
UR - http://www.scopus.com/inward/record.url?scp=84866939099&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866939099&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2210992
DO - 10.1109/LED.2012.2210992
M3 - Article
VL - 33
SP - 1363
EP - 1365
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
M1 - 6296680
ER -