Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

In Seok Seo, In-Hwan Lee, Yong Jo Park, Cheul Ro Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.

Original languageEnglish
Pages (from-to)51-57
Number of pages7
JournalJournal of Crystal Growth
Volume252
Issue number1-3
DOIs
Publication statusPublished - 2003 May 1
Externally publishedYes

Fingerprint

Photodetectors
photometers
Heterojunctions
Metals
metals
Semiconductor materials
missile detection
blindness
Aluminum Oxide
Astronomy
Epilayers
Dark currents
Metallorganic chemical vapor deposition
dark current
Missiles
astronomy
Sapphire
rejection
low noise
metalorganic chemical vapor deposition

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials
  • B3. Hetero-junction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure. / Seo, In Seok; Lee, In-Hwan; Park, Yong Jo; Lee, Cheul Ro.

In: Journal of Crystal Growth, Vol. 252, No. 1-3, 01.05.2003, p. 51-57.

Research output: Contribution to journalArticle

Seo, In Seok ; Lee, In-Hwan ; Park, Yong Jo ; Lee, Cheul Ro. / Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure. In: Journal of Crystal Growth. 2003 ; Vol. 252, No. 1-3. pp. 51-57.
@article{b1f3c4a3109c49779180eca20885180a,
title = "Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure",
abstract = "We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.",
keywords = "A3. Metalorganic chemical vapor deposition, B2. Semiconducting III-V materials, B3. Hetero-junction semiconductor devices",
author = "Seo, {In Seok} and In-Hwan Lee and Park, {Yong Jo} and Lee, {Cheul Ro}",
year = "2003",
month = "5",
day = "1",
doi = "10.1016/S0022-0248(02)02523-X",
language = "English",
volume = "252",
pages = "51--57",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

AU - Seo, In Seok

AU - Lee, In-Hwan

AU - Park, Yong Jo

AU - Lee, Cheul Ro

PY - 2003/5/1

Y1 - 2003/5/1

N2 - We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.

AB - We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting III-V materials

KW - B3. Hetero-junction semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=0037401657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037401657&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02523-X

DO - 10.1016/S0022-0248(02)02523-X

M3 - Article

AN - SCOPUS:0037401657

VL - 252

SP - 51

EP - 57

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-3

ER -