Abstract
We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.
| Original language | English |
|---|---|
| Pages (from-to) | 51-57 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 252 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2003 May 1 |
| Externally published | Yes |
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Keywords
- A3. Metalorganic chemical vapor deposition
- B2. Semiconducting III-V materials
- B3. Hetero-junction semiconductor devices
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure. / Seo, In Seok; Lee, In-Hwan; Park, Yong Jo; Lee, Cheul Ro.
In: Journal of Crystal Growth, Vol. 252, No. 1-3, 01.05.2003, p. 51-57.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure
AU - Seo, In Seok
AU - Lee, In-Hwan
AU - Park, Yong Jo
AU - Lee, Cheul Ro
PY - 2003/5/1
Y1 - 2003/5/1
N2 - We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.
AB - We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.
KW - A3. Metalorganic chemical vapor deposition
KW - B2. Semiconducting III-V materials
KW - B3. Hetero-junction semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=0037401657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037401657&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(02)02523-X
DO - 10.1016/S0022-0248(02)02523-X
M3 - Article
AN - SCOPUS:0037401657
VL - 252
SP - 51
EP - 57
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-3
ER -