Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, A. Hossain, Kihyun Kim, R. B. James

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.

Original languageEnglish
Pages (from-to)46-56
Number of pages11
JournalJournal of Crystal Growth
Volume379
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Fingerprint

Gamma rays
Radiation detectors
radiation detectors
gamma rays
Detectors
Defects
Crystals
evaluation
detectors
defects
crystals
Infrared transmission
Carrier transport
Crystal defects
Charge carriers
crystal defects
Topography
homogeneity
charge carriers
grade

Keywords

  • A1. Defects
  • A1. Radiation
  • A1. Volume defects
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors. / Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Yang, G.; Hossain, A.; Kim, Kihyun; James, R. B.

In: Journal of Crystal Growth, Vol. 379, 01.01.2013, p. 46-56.

Research output: Contribution to journalArticle

Bolotnikov, A. E. ; Camarda, G. S. ; Cui, Y. ; Yang, G. ; Hossain, A. ; Kim, Kihyun ; James, R. B. / Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors. In: Journal of Crystal Growth. 2013 ; Vol. 379. pp. 46-56.
@article{c887e99ce5c34f75a80d2aea780becac,
title = "Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors",
abstract = "Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.",
keywords = "A1. Defects, A1. Radiation, A1. Volume defects, B2. Semiconducting materials",
author = "Bolotnikov, {A. E.} and Camarda, {G. S.} and Y. Cui and G. Yang and A. Hossain and Kihyun Kim and James, {R. B.}",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2013.01.048",
language = "English",
volume = "379",
pages = "46--56",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Yang, G.

AU - Hossain, A.

AU - Kim, Kihyun

AU - James, R. B.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.

AB - Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.

KW - A1. Defects

KW - A1. Radiation

KW - A1. Volume defects

KW - B2. Semiconducting materials

UR - http://www.scopus.com/inward/record.url?scp=84885372101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885372101&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.01.048

DO - 10.1016/j.jcrysgro.2013.01.048

M3 - Article

AN - SCOPUS:84885372101

VL - 379

SP - 46

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -