Characterization of a CMOS 135-GHz low noise amplifier with two different noise measurement methods

Doyoon Kim, Sooyeon Kim, Kiryong Song, Jungsoo Kim, Junghwan Yoo, Jae-Sung Rieh

Research output: Contribution to journalArticle

Abstract

A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.

Original languageEnglish
Pages (from-to)536-540
Number of pages5
JournalJournal of Semiconductor Technology and Science
Volume18
Issue number4
DOIs
Publication statusPublished - 2018 Aug 1

Keywords

  • 65 nm CMOS
  • Low-noise amplifier
  • N-times power method
  • Noise
  • Y-factor method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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