Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate

Kiyeol Kwak, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

Original languageEnglish
Pages (from-to)9118-9126
Number of pages9
JournalSensors (Switzerland)
Volume10
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Nanowires
Field effect transistors
Photodiodes
Plastics
photodiodes
nanowires
plastics
field effect transistors
Equipment and Supplies
Substrates
Photocurrents
photocurrents
Electric potential
electric potential
Gates (transistor)
adjusting

Keywords

  • FET
  • Nanowire
  • Optical sensor
  • Plastic substrate
  • pn heterojunction photodiode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Analytical Chemistry
  • Biochemistry

Cite this

Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate. / Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig.

In: Sensors (Switzerland), Vol. 10, No. 10, 01.10.2010, p. 9118-9126.

Research output: Contribution to journalArticle

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