Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate

Kiyeol Kwak, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

Original languageEnglish
Pages (from-to)9118-9126
Number of pages9
JournalSensors (Switzerland)
Issue number10
Publication statusPublished - 2010 Oct 1


  • FET
  • Nanowire
  • Optical sensor
  • Plastic substrate
  • pn heterojunction photodiode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Analytical Chemistry
  • Biochemistry


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