Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

Original languageEnglish
JournalCurrent Applied Physics
Volume11
Issue number4 SUPPL.
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
metalorganic chemical vapor deposition
Chemical vapor deposition
sapphire
Metals
Substrates
Transmission electron microscopy
Defects
transmission electron microscopy
Crystals
defects
hemispheres
crystals
Photoluminescence
emission spectra
photoluminescence
X rays

Keywords

  • Defect reduction
  • InGaN
  • Non-polar GaN
  • PSS

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition. / Yoo, Geunho; Park, Hyunsung; Lee, Donghun; Lim, Hyoungjin; Lee, Seunga; Kong, Bohyun; Cho, Hyungkoun; Park, Hyoungwon; Lee, Heon; Nam, Okhyun.

In: Current Applied Physics, Vol. 11, No. 4 SUPPL., 01.07.2011.

Research output: Contribution to journalArticle

Yoo, Geunho ; Park, Hyunsung ; Lee, Donghun ; Lim, Hyoungjin ; Lee, Seunga ; Kong, Bohyun ; Cho, Hyungkoun ; Park, Hyoungwon ; Lee, Heon ; Nam, Okhyun. / Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition. In: Current Applied Physics. 2011 ; Vol. 11, No. 4 SUPPL.
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AU - Kong, Bohyun

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