Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

Jae Dong Byun, Jung Il Yoon, Sahn Nahm, Jin Cheol Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 °C exhibited excellent dielectric properties of dielectric constant, k≈1,000 and dissipation factor, tan δ≤0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47×10-7 A/cm2 at 1.25 V.

Original languageEnglish
Pages (from-to)1755-1761
Number of pages7
JournalMaterials Research Bulletin
Volume35
Issue number11
DOIs
Publication statusPublished - 2000 Aug 1

Fingerprint

Thin films
thin films
Leakage currents
Dielectric properties
dielectric properties
leakage
Crystal structure
Metals
Decomposition
decomposition
crystal structure
Perovskite
Magnetron sputtering
metals
magnetron sputtering
Permittivity
Current density
dissipation
Annealing
permittivity

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film. / Byun, Jae Dong; Yoon, Jung Il; Nahm, Sahn; Kim, Jin Cheol.

In: Materials Research Bulletin, Vol. 35, No. 11, 01.08.2000, p. 1755-1761.

Research output: Contribution to journalArticle

Byun, Jae Dong ; Yoon, Jung Il ; Nahm, Sahn ; Kim, Jin Cheol. / Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film. In: Materials Research Bulletin. 2000 ; Vol. 35, No. 11. pp. 1755-1761.
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