Characterization of CdMnTe radiation detectors using current and charge transients

R. Rafiei, M. I. Reinhard, A. Sarbutt, S. Uxa, D. Boardman, G. C. Watt, E. Belas, Kihyun Kim, A. E. Bolotnikov, R. B. James

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charge transport characteristics of Cd0.95Mn0.05Te: In radiation detectors have been evaluated by combining time resolved current transient measurements with time of flight charge transient measurements. The shapes of the measured current pulses have been interpreted with respect to a concentration of net positive space-charge, which has resulted in an electric field gradient across the detector bulk. From the recorded current pulses the charge collection efficiency of the detector was found to approach 100%. From the evolution of the charge collection efficiency with applied bias, the electron mobility-lifetime product of μnτn = (8.5 ± 0.4) × 10-4 cm2/V has been estimated. The electron transit time was determined using both transient current technique and time of flight measurements in the bias range of 100-1900 V From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/(V.s) at room temperature.

Original languageEnglish
Article number073001
JournalJournal of Semiconductors
Volume34
Issue number7
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Radiation detectors
radiation detectors
Electron mobility
electron mobility
Electric fields
Detectors
Electric space charge
electric fields
Charge transfer
detectors
transit time
pulses
space charge
Electrons
life (durability)
gradients
room temperature
products
Temperature
electrons

Keywords

  • CdMnTe
  • CMT
  • detector fabrication
  • radiation detector
  • time of flight technique
  • transient current technique

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Rafiei, R., Reinhard, M. I., Sarbutt, A., Uxa, S., Boardman, D., Watt, G. C., ... James, R. B. (2013). Characterization of CdMnTe radiation detectors using current and charge transients. Journal of Semiconductors, 34(7), [073001]. https://doi.org/10.1088/1674-4926/34/7/073001

Characterization of CdMnTe radiation detectors using current and charge transients. / Rafiei, R.; Reinhard, M. I.; Sarbutt, A.; Uxa, S.; Boardman, D.; Watt, G. C.; Belas, E.; Kim, Kihyun; Bolotnikov, A. E.; James, R. B.

In: Journal of Semiconductors, Vol. 34, No. 7, 073001, 01.07.2013.

Research output: Contribution to journalArticle

Rafiei, R, Reinhard, MI, Sarbutt, A, Uxa, S, Boardman, D, Watt, GC, Belas, E, Kim, K, Bolotnikov, AE & James, RB 2013, 'Characterization of CdMnTe radiation detectors using current and charge transients', Journal of Semiconductors, vol. 34, no. 7, 073001. https://doi.org/10.1088/1674-4926/34/7/073001
Rafiei, R. ; Reinhard, M. I. ; Sarbutt, A. ; Uxa, S. ; Boardman, D. ; Watt, G. C. ; Belas, E. ; Kim, Kihyun ; Bolotnikov, A. E. ; James, R. B. / Characterization of CdMnTe radiation detectors using current and charge transients. In: Journal of Semiconductors. 2013 ; Vol. 34, No. 7.
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