Abstract
Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.
| Original language | English |
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| Pages | 530-533 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
| Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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| City | St.Petersburg, Russia |
| Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces