Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

Byeong Kwon Ju, Seong Jin Kim, Yun Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.

Original languageEnglish
Pages530-533
Number of pages4
Publication statusPublished - 1996
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Characterization of CVD diamond film and diamond-tip field emitter array for FED applications'. Together they form a unique fingerprint.

  • Cite this

    Ju, B. K., Kim, S. J., Lee, Y. H., Park, B. S., Baik, Y. J., Lim, S., & Oh, M. H. (1996). Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. 530-533. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .