Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

Byeong Kwon Ju, Seong Jin Kim, Yun-Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages530-533
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

diamond films
emitters
diamonds
vapor deposition
threshold voltage
electric potential
electrical measurement
Raman spectroscopy
etching
radii
silicon

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Ju, B. K., Kim, S. J., Lee, Y-H., Park, B. S., Baik, Y. J., Lim, S., & Oh, M. H. (1996). Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 530-533). Piscataway, NJ, United States: IEEE.

Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. / Ju, Byeong Kwon; Kim, Seong Jin; Lee, Yun-Hi; Park, Beom Soo; Baik, Young Joon; Lim, Sungkyoo; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 530-533.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, BK, Kim, SJ, Lee, Y-H, Park, BS, Baik, YJ, Lim, S & Oh, MH 1996, Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 530-533, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Ju BK, Kim SJ, Lee Y-H, Park BS, Baik YJ, Lim S et al. Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 530-533
Ju, Byeong Kwon ; Kim, Seong Jin ; Lee, Yun-Hi ; Park, Beom Soo ; Baik, Young Joon ; Lim, Sungkyoo ; Oh, Myung Hwan. / Characterization of CVD diamond film and diamond-tip field emitter array for FED applications. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 530-533
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abstract = "Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.",
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