Abstract
We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 1019 cm- 3 and 2.8 × 10- 6 Ω cm- 2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.
Original language | English |
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Pages (from-to) | 250-253 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 514 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2006 Aug 30 |
Keywords
- Chemical vapor deposition
- Diffusion
- Indium phosphide
- Optoelectronic devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry