Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts

M. D. Kim; J. M. Baek; T. G. Kim; S. G. Kim; K. S. Chung

doi:10.1016/j.tsf.2006.02.019

Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, K. S. Chung

School of Electrical Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 10¹⁹ cm^{- 3} and 2.8 × 10^{- 6} Ω cm^{- 2}, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.

Original language	English
Pages (from-to)	250-253
Number of pages	4
Journal	Thin Solid Films
Volume	514
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2006.02.019
Publication status	Published - 2006 Aug 30

Keywords

Chemical vapor deposition
Diffusion
Indium phosphide
Optoelectronic devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kim, M. D., Baek, J. M., Kim, T. G., Kim, S. G., & Chung, K. S. (2006). Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts. Thin Solid Films, 514(1-2), 250-253. https://doi.org/10.1016/j.tsf.2006.02.019

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title = "Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts",

abstract = "We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 1019 cm- 3 and 2.8 × 10- 6 Ω cm- 2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.",

keywords = "Chemical vapor deposition, Diffusion, Indium phosphide, Optoelectronic devices",

author = "Kim, {M. D.} and Baek, {J. M.} and Kim, {T. G.} and Kim, {S. G.} and Chung, {K. S.}",

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AU - Kim, M. D.

AU - Baek, J. M.

AU - Kim, T. G.

AU - Kim, S. G.

AU - Chung, K. S.

PY - 2006/8/30

Y1 - 2006/8/30

N2 - We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 1019 cm- 3 and 2.8 × 10- 6 Ω cm- 2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.

AB - We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 1019 cm- 3 and 2.8 × 10- 6 Ω cm- 2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.

KW - Chemical vapor deposition

KW - Diffusion

KW - Indium phosphide

KW - Optoelectronic devices

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