Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, K. S. Chung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 × 1019 cm- 3 and 2.8 × 10- 6 Ω cm- 2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability.

Original languageEnglish
Pages (from-to)250-253
Number of pages4
JournalThin Solid Films
Volume514
Issue number1-2
DOIs
Publication statusPublished - 2006 Aug 30

Keywords

  • Chemical vapor deposition
  • Diffusion
  • Indium phosphide
  • Optoelectronic devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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