Characterization of dual floating gate memory devices constructed on glass

Sungsu Kim; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.ssc.2010.10.044

Characterization of dual floating gate memory devices constructed on glass

Sungsu Kim, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.

Original language	English
Pages (from-to)	151-154
Number of pages	4
Journal	Solid State Communications
Volume	151
Issue number	2
DOIs	https://doi.org/10.1016/j.ssc.2010.10.044
Publication status	Published - 2011 Jan

Keywords

A. Aluminum nanoparticles
C. Dual-floating gate memory
E. 2-bit operation

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2010.10.044

Cite this

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title = "Characterization of dual floating gate memory devices constructed on glass",

abstract = "The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.",

keywords = "A. Aluminum nanoparticles, C. Dual-floating gate memory, E. 2-bit operation",

author = "Sungsu Kim and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program (M10703000980-08M0300-98010), World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), and Hynix-Korea University Nano-Semiconductor Program. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = jan,

doi = "10.1016/j.ssc.2010.10.044",

language = "English",

volume = "151",

pages = "151--154",

journal = "Solid State Communications",

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T1 - Characterization of dual floating gate memory devices constructed on glass

AU - Kim, Sungsu

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program (M10703000980-08M0300-98010), World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), and Hynix-Korea University Nano-Semiconductor Program. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/1

Y1 - 2011/1

N2 - The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.

AB - The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.

KW - A. Aluminum nanoparticles

KW - C. Dual-floating gate memory

KW - E. 2-bit operation

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DO - 10.1016/j.ssc.2010.10.044

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EP - 154

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 2

ER -

Characterization of dual floating gate memory devices constructed on glass

Abstract

Keywords

ASJC Scopus subject areas

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