Characterization of dual floating gate memory devices constructed on glass

Sungsu Kim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalSolid State Communications
Volume151
Issue number2
DOIs
Publication statusPublished - 2011 Jan

Keywords

  • A. Aluminum nanoparticles
  • C. Dual-floating gate memory
  • E. 2-bit operation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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