Abstract
The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through FowlerNordheim (FN) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 151-154 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 151 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Jan |
Keywords
- A. Aluminum nanoparticles
- C. Dual-floating gate memory
- E. 2-bit operation
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Cite this
Kim, S., Cho, K., & Kim, S. (2011). Characterization of dual floating gate memory devices constructed on glass. Solid State Communications, 151(2), 151-154. https://doi.org/10.1016/j.ssc.2010.10.044