Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Chang Hee Cho, Baek Hyun Kim, Sang Kyun Kim, Seong Ju Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p -type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.

Original languageEnglish
Article number223110
JournalApplied Physics Letters
Volume96
Issue number22
DOIs
Publication statusPublished - 2010 May 31
Externally publishedYes

Fingerprint

silicon nitrides
nanocrystals
capacitance
electronic structure
silicon
spectroscopy
capacitors
valence
photoluminescence
conduction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy. / Cho, Chang Hee; Kim, Baek Hyun; Kim, Sang Kyun; Park, Seong Ju.

In: Applied Physics Letters, Vol. 96, No. 22, 223110, 31.05.2010.

Research output: Contribution to journalArticle

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