Characterization of erbium chloride seeded gallium nitride nanocrystals

J. Ahn, M. A. Mastro, J. A. Freitas, H. Y. Kim, R. T. Holm, C. R. Eddy, J. Hite, S. I. Maximenko, J. Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

Original languageEnglish
Pages (from-to)1111-1114
Number of pages4
JournalThin Solid Films
Volume517
Issue number3
DOIs
Publication statusPublished - 2008 Dec 1

Keywords

  • Gallium
  • Nanocrystal
  • Nitrides
  • Phonon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Ahn, J., Mastro, M. A., Freitas, J. A., Kim, H. Y., Holm, R. T., Eddy, C. R., Hite, J., Maximenko, S. I., & Kim, J. (2008). Characterization of erbium chloride seeded gallium nitride nanocrystals. Thin Solid Films, 517(3), 1111-1114. https://doi.org/10.1016/j.tsf.2008.08.170