Characterization of erbium chloride seeded gallium nitride nanocrystals

J. Ahn, M. A. Mastro, J. A. Freitas, H. Y. Kim, R. T. Holm, C. R. Eddy, J. Hite, S. I. Maximenko, Ji Hyun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

Original languageEnglish
Pages (from-to)1111-1114
Number of pages4
JournalThin Solid Films
Volume517
Issue number3
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Gallium nitride
gallium nitrides
Erbium
Nanocrystals
erbium
nanocrystals
chlorides
Organic Chemicals
Seed
Chemical vapor deposition
Organic chemicals
Metals
Ions
metalorganic chemical vapor deposition
Fabrication
seeds
delivery
fabrication
gallium nitride
erbium chloride

Keywords

  • Gallium
  • Nanocrystal
  • Nitrides
  • Phonon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Ahn, J., Mastro, M. A., Freitas, J. A., Kim, H. Y., Holm, R. T., Eddy, C. R., ... Kim, J. H. (2008). Characterization of erbium chloride seeded gallium nitride nanocrystals. Thin Solid Films, 517(3), 1111-1114. https://doi.org/10.1016/j.tsf.2008.08.170

Characterization of erbium chloride seeded gallium nitride nanocrystals. / Ahn, J.; Mastro, M. A.; Freitas, J. A.; Kim, H. Y.; Holm, R. T.; Eddy, C. R.; Hite, J.; Maximenko, S. I.; Kim, Ji Hyun.

In: Thin Solid Films, Vol. 517, No. 3, 01.12.2008, p. 1111-1114.

Research output: Contribution to journalArticle

Ahn, J, Mastro, MA, Freitas, JA, Kim, HY, Holm, RT, Eddy, CR, Hite, J, Maximenko, SI & Kim, JH 2008, 'Characterization of erbium chloride seeded gallium nitride nanocrystals', Thin Solid Films, vol. 517, no. 3, pp. 1111-1114. https://doi.org/10.1016/j.tsf.2008.08.170
Ahn J, Mastro MA, Freitas JA, Kim HY, Holm RT, Eddy CR et al. Characterization of erbium chloride seeded gallium nitride nanocrystals. Thin Solid Films. 2008 Dec 1;517(3):1111-1114. https://doi.org/10.1016/j.tsf.2008.08.170
Ahn, J. ; Mastro, M. A. ; Freitas, J. A. ; Kim, H. Y. ; Holm, R. T. ; Eddy, C. R. ; Hite, J. ; Maximenko, S. I. ; Kim, Ji Hyun. / Characterization of erbium chloride seeded gallium nitride nanocrystals. In: Thin Solid Films. 2008 ; Vol. 517, No. 3. pp. 1111-1114.
@article{03fc56e1f1d34483b7b5b7309a6d159c,
title = "Characterization of erbium chloride seeded gallium nitride nanocrystals",
abstract = "A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.",
keywords = "Gallium, Nanocrystal, Nitrides, Phonon",
author = "J. Ahn and Mastro, {M. A.} and Freitas, {J. A.} and Kim, {H. Y.} and Holm, {R. T.} and Eddy, {C. R.} and J. Hite and Maximenko, {S. I.} and Kim, {Ji Hyun}",
year = "2008",
month = "12",
day = "1",
doi = "10.1016/j.tsf.2008.08.170",
language = "English",
volume = "517",
pages = "1111--1114",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Characterization of erbium chloride seeded gallium nitride nanocrystals

AU - Ahn, J.

AU - Mastro, M. A.

AU - Freitas, J. A.

AU - Kim, H. Y.

AU - Holm, R. T.

AU - Eddy, C. R.

AU - Hite, J.

AU - Maximenko, S. I.

AU - Kim, Ji Hyun

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

AB - A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals.

KW - Gallium

KW - Nanocrystal

KW - Nitrides

KW - Phonon

UR - http://www.scopus.com/inward/record.url?scp=56649089689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56649089689&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.08.170

DO - 10.1016/j.tsf.2008.08.170

M3 - Article

AN - SCOPUS:56649089689

VL - 517

SP - 1111

EP - 1114

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 3

ER -