Characterization of GaAs1-ySby grown by molecular beam epitaxy

A. Z. Li, J. H. Zhao, Jichai Jeong, D. Wong, W. C. Zhou, J. C. Lee, T. Koyanagi, Z. Y. Chen, T. E. Schlesinger, A. G. Milnes

Research output: Contribution to journalArticle

Abstract

GaSb has a lattice constant which is 7.8% greater than that of GaAs and for bulk growth of the ternary alloy GaAs1-ySby a miscibility gap has been reported for the range 0.28<y<0.64. However, in this work, GaAs1-ySby layers (0.5-1.5 μm) have been grown by molecular beam epitaxy as GaAs over the whole range of y. Photoluminescence and photoresponse peak widths increase as the antimony content is increased in the range uo to 0.28, indicating poorer crystal quality. This is confirmed also by Raman shift measurements. The growth runs were all made in the presence of a silicon flux. For y less than about 0.26 the layers show n-type doping in the low 1016 cm-3 range. When y exceeds about 0.20-0.28 (depending on the precise growth conditions), the layers show p-type conductivity probably involving acceptor complexes of GaSb. In the n-type layers, electron traps are observed at about 0.18, 0.40, 0.48 and 0.69-0.85 eV below the conduction band edge. The traps ECMI (0.18 eV) and ECM2 (0.40 eV) track the conduction band edge, being independent of the antimony content. In the p-type layers, hole traps are seen at about 0.38, 0.45 and 0.64 eV above the valence band edge. These levels are nearly independent of y in the range 0.43-0.76.

Original languageEnglish
Pages (from-to)203-211
Number of pages9
JournalMaterials Science and Engineering B
Volume1
Issue number2
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Antimony
molecular beam epitaxy
Conduction bands
Hole traps
traps
Electron traps
antimony
Ternary alloys
Silicon
Valence bands
conduction bands
Lattice constants
Photoluminescence
Solubility
Doping (additives)
miscibility gap
Fluxes
ternary alloys
Crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Li, A. Z., Zhao, J. H., Jeong, J., Wong, D., Zhou, W. C., Lee, J. C., ... Milnes, A. G. (1988). Characterization of GaAs1-ySby grown by molecular beam epitaxy. Materials Science and Engineering B, 1(2), 203-211. https://doi.org/10.1016/0921-5107(88)90020-7

Characterization of GaAs1-ySby grown by molecular beam epitaxy. / Li, A. Z.; Zhao, J. H.; Jeong, Jichai; Wong, D.; Zhou, W. C.; Lee, J. C.; Koyanagi, T.; Chen, Z. Y.; Schlesinger, T. E.; Milnes, A. G.

In: Materials Science and Engineering B, Vol. 1, No. 2, 01.01.1988, p. 203-211.

Research output: Contribution to journalArticle

Li, AZ, Zhao, JH, Jeong, J, Wong, D, Zhou, WC, Lee, JC, Koyanagi, T, Chen, ZY, Schlesinger, TE & Milnes, AG 1988, 'Characterization of GaAs1-ySby grown by molecular beam epitaxy', Materials Science and Engineering B, vol. 1, no. 2, pp. 203-211. https://doi.org/10.1016/0921-5107(88)90020-7
Li, A. Z. ; Zhao, J. H. ; Jeong, Jichai ; Wong, D. ; Zhou, W. C. ; Lee, J. C. ; Koyanagi, T. ; Chen, Z. Y. ; Schlesinger, T. E. ; Milnes, A. G. / Characterization of GaAs1-ySby grown by molecular beam epitaxy. In: Materials Science and Engineering B. 1988 ; Vol. 1, No. 2. pp. 203-211.
@article{389beb48ec74472bb27183cbbcfb436a,
title = "Characterization of GaAs1-ySby grown by molecular beam epitaxy",
abstract = "GaSb has a lattice constant which is 7.8{\%} greater than that of GaAs and for bulk growth of the ternary alloy GaAs1-ySby a miscibility gap has been reported for the range 0.281-ySby layers (0.5-1.5 μm) have been grown by molecular beam epitaxy as GaAs over the whole range of y. Photoluminescence and photoresponse peak widths increase as the antimony content is increased in the range uo to 0.28, indicating poorer crystal quality. This is confirmed also by Raman shift measurements. The growth runs were all made in the presence of a silicon flux. For y less than about 0.26 the layers show n-type doping in the low 1016 cm-3 range. When y exceeds about 0.20-0.28 (depending on the precise growth conditions), the layers show p-type conductivity probably involving acceptor complexes of GaSb. In the n-type layers, electron traps are observed at about 0.18, 0.40, 0.48 and 0.69-0.85 eV below the conduction band edge. The traps ECMI (0.18 eV) and ECM2 (0.40 eV) track the conduction band edge, being independent of the antimony content. In the p-type layers, hole traps are seen at about 0.38, 0.45 and 0.64 eV above the valence band edge. These levels are nearly independent of y in the range 0.43-0.76.",
author = "Li, {A. Z.} and Zhao, {J. H.} and Jichai Jeong and D. Wong and Zhou, {W. C.} and Lee, {J. C.} and T. Koyanagi and Chen, {Z. Y.} and Schlesinger, {T. E.} and Milnes, {A. G.}",
year = "1988",
month = "1",
day = "1",
doi = "10.1016/0921-5107(88)90020-7",
language = "English",
volume = "1",
pages = "203--211",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Characterization of GaAs1-ySby grown by molecular beam epitaxy

AU - Li, A. Z.

AU - Zhao, J. H.

AU - Jeong, Jichai

AU - Wong, D.

AU - Zhou, W. C.

AU - Lee, J. C.

AU - Koyanagi, T.

AU - Chen, Z. Y.

AU - Schlesinger, T. E.

AU - Milnes, A. G.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - GaSb has a lattice constant which is 7.8% greater than that of GaAs and for bulk growth of the ternary alloy GaAs1-ySby a miscibility gap has been reported for the range 0.281-ySby layers (0.5-1.5 μm) have been grown by molecular beam epitaxy as GaAs over the whole range of y. Photoluminescence and photoresponse peak widths increase as the antimony content is increased in the range uo to 0.28, indicating poorer crystal quality. This is confirmed also by Raman shift measurements. The growth runs were all made in the presence of a silicon flux. For y less than about 0.26 the layers show n-type doping in the low 1016 cm-3 range. When y exceeds about 0.20-0.28 (depending on the precise growth conditions), the layers show p-type conductivity probably involving acceptor complexes of GaSb. In the n-type layers, electron traps are observed at about 0.18, 0.40, 0.48 and 0.69-0.85 eV below the conduction band edge. The traps ECMI (0.18 eV) and ECM2 (0.40 eV) track the conduction band edge, being independent of the antimony content. In the p-type layers, hole traps are seen at about 0.38, 0.45 and 0.64 eV above the valence band edge. These levels are nearly independent of y in the range 0.43-0.76.

AB - GaSb has a lattice constant which is 7.8% greater than that of GaAs and for bulk growth of the ternary alloy GaAs1-ySby a miscibility gap has been reported for the range 0.281-ySby layers (0.5-1.5 μm) have been grown by molecular beam epitaxy as GaAs over the whole range of y. Photoluminescence and photoresponse peak widths increase as the antimony content is increased in the range uo to 0.28, indicating poorer crystal quality. This is confirmed also by Raman shift measurements. The growth runs were all made in the presence of a silicon flux. For y less than about 0.26 the layers show n-type doping in the low 1016 cm-3 range. When y exceeds about 0.20-0.28 (depending on the precise growth conditions), the layers show p-type conductivity probably involving acceptor complexes of GaSb. In the n-type layers, electron traps are observed at about 0.18, 0.40, 0.48 and 0.69-0.85 eV below the conduction band edge. The traps ECMI (0.18 eV) and ECM2 (0.40 eV) track the conduction band edge, being independent of the antimony content. In the p-type layers, hole traps are seen at about 0.38, 0.45 and 0.64 eV above the valence band edge. These levels are nearly independent of y in the range 0.43-0.76.

UR - http://www.scopus.com/inward/record.url?scp=0024104873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024104873&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(88)90020-7

DO - 10.1016/0921-5107(88)90020-7

M3 - Article

VL - 1

SP - 203

EP - 211

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -