Characterization of GaAs1-ySby grown by molecular beam epitaxy

A. Z. Li, J. H. Zhao, J. C. Jeong, D. Wong, W. C. Zhou, J. C. Lee, T. Koyanagi, Z. Y. Chen, T. E. Schlesinger, A. G. Milnes

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1 Citation (Scopus)


GaSb has a lattice constant which is 7.8% greater than that of GaAs and for bulk growth of the ternary alloy GaAs1-ySby a miscibility gap has been reported for the range 0.28<y<0.64. However, in this work, GaAs1-ySby layers (0.5-1.5 μm) have been grown by molecular beam epitaxy as GaAs over the whole range of y. Photoluminescence and photoresponse peak widths increase as the antimony content is increased in the range uo to 0.28, indicating poorer crystal quality. This is confirmed also by Raman shift measurements. The growth runs were all made in the presence of a silicon flux. For y less than about 0.26 the layers show n-type doping in the low 1016 cm-3 range. When y exceeds about 0.20-0.28 (depending on the precise growth conditions), the layers show p-type conductivity probably involving acceptor complexes of GaSb. In the n-type layers, electron traps are observed at about 0.18, 0.40, 0.48 and 0.69-0.85 eV below the conduction band edge. The traps ECMI (0.18 eV) and ECM2 (0.40 eV) track the conduction band edge, being independent of the antimony content. In the p-type layers, hole traps are seen at about 0.38, 0.45 and 0.64 eV above the valence band edge. These levels are nearly independent of y in the range 0.43-0.76.

Original languageEnglish
Pages (from-to)203-211
Number of pages9
JournalMaterials Science and Engineering B
Issue number2
Publication statusPublished - 1988 Nov

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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