Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite

M. Kim, B. H. Jeon, J. Y. Kim, Jong-Ho Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High-quality GaN nanowires have been synthesized by applying the laser ablation method. FE-SEM, XRD, HR-TEM, and EDX measurements show that the GaN nanowires are single crystals prepared through the vapor-liquid-solid growth mechanism. The light emitting devices (LEDs) with the structure of ITO-coated glass/PEDOT:PSS/GaN nanowire-PVK nanocomposites/DCM-doped Alq3/Li:Al have been fabricated and examined together with the investigations of luminescence and device characteristics.

Original languageEnglish
Pages (from-to)743-744
Number of pages2
JournalSynthetic Metals
Volume135-136
DOIs
Publication statusPublished - 2003 Apr 4

Fingerprint

Nanowires
Nanocomposites
nanocomposites
nanowires
Laser ablation
ITO (semiconductors)
laser ablation
Luminescence
Energy dispersive spectroscopy
Vapors
Single crystals
vapors
luminescence
Transmission electron microscopy
Glass
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
glass
single crystals

Keywords

  • Alq
  • Electroluminescence
  • GaN nanowire
  • Light emitting device
  • Photoluminescence
  • Polyvinylcarbazole

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite. / Kim, M.; Jeon, B. H.; Kim, J. Y.; Choi, Jong-Ho.

In: Synthetic Metals, Vol. 135-136, 04.04.2003, p. 743-744.

Research output: Contribution to journalArticle

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