Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite

M. Kim, B. H. Jeon, J. Y. Kim, J. H. Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High-quality GaN nanowires have been synthesized by applying the laser ablation method. FE-SEM, XRD, HR-TEM, and EDX measurements show that the GaN nanowires are single crystals prepared through the vapor-liquid-solid growth mechanism. The light emitting devices (LEDs) with the structure of ITO-coated glass/PEDOT:PSS/GaN nanowire-PVK nanocomposites/DCM-doped Alq3/Li:Al have been fabricated and examined together with the investigations of luminescence and device characteristics.

Original languageEnglish
Pages (from-to)743-744
Number of pages2
JournalSynthetic Metals
Volume135-136
DOIs
Publication statusPublished - 2003 Apr 4

Keywords

  • Alq
  • Electroluminescence
  • GaN nanowire
  • Light emitting device
  • Photoluminescence
  • Polyvinylcarbazole

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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