Characterization of GaN/Si(111) heteroepitaxy with variation of thickness grown by using Al xGa 1-xN superlattice intermediate layer

Hyung Seok Han, Dong Wook Kim, In-Hwan Lee, Cheul Ro Lee, Chul Soo Sone

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have studied the growth of Al 0.2Ga 0.8N/GaN superlattices as an intermediate layer between GaN epitaxal layer and Si substrate in order to control the tensile stress induced by cooling after growth. This Al 0.2Ga 0.8N/GaN superlattice is used for avoiding the abrupt change in thermal expansion coefficient between the GaN epitaxial layer and Si substrate as well as for improving the structural and optical qualities of the GaN layer. We report on characterization of various thickness changes of GaN/Si(111) epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD). We have studied the effect of various thickness changes of GaN epitaxial layer from 0.5 to 1.2 μm, and, we have obtained a crack free GaN/Si(111) epitaxial layer with various thicknesses ranging from 0.5 to 1.0 μm and the best characteristics of the GaN epitaxial layer at 1.0 μm. Photoluminescence (PL) spectra at room temperature of the GaN/Si(111) epitaxial layer grown on the superlattice showed a sharp band edge emission peak at 366.2 nm with full width at half maximum (FWHM) of 63.9 meV. The average RMS by atomic force microscope (AFM) was 0.775 nm. FWHM of double-crystal X-ray diffractometer (DCXRD) rocking curve obtained for the (0002) diffraction was 886 arcsec. It was found that the characterization of the GaN/Si(111) with A l.2Ga 0.8N/GaN superlattice was still worse than that on GaN/sapphire, due to the existence of the intrinsic tensile stress caused by GaN grain boundaries.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume47
Issue numberSUPPL. 3
Publication statusPublished - 2005 Nov 1
Externally publishedYes

Fingerprint

tensile stress
diffractometers
metalorganic chemical vapor deposition
superlattices
thermal expansion
sapphire
cracks
grain boundaries
microscopes
photoluminescence
cooling
room temperature
curves
coefficients
diffraction
crystals
x rays

Keywords

  • AFM
  • Crack free
  • MOCVD
  • PL
  • Superlattice
  • XRD

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Characterization of GaN/Si(111) heteroepitaxy with variation of thickness grown by using Al xGa 1-xN superlattice intermediate layer. / Han, Hyung Seok; Kim, Dong Wook; Lee, In-Hwan; Lee, Cheul Ro; Sone, Chul Soo.

In: Journal of the Korean Physical Society, Vol. 47, No. SUPPL. 3, 01.11.2005.

Research output: Contribution to journalArticle

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T1 - Characterization of GaN/Si(111) heteroepitaxy with variation of thickness grown by using Al xGa 1-xN superlattice intermediate layer

AU - Han, Hyung Seok

AU - Kim, Dong Wook

AU - Lee, In-Hwan

AU - Lee, Cheul Ro

AU - Sone, Chul Soo

PY - 2005/11/1

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N2 - We have studied the growth of Al 0.2Ga 0.8N/GaN superlattices as an intermediate layer between GaN epitaxal layer and Si substrate in order to control the tensile stress induced by cooling after growth. This Al 0.2Ga 0.8N/GaN superlattice is used for avoiding the abrupt change in thermal expansion coefficient between the GaN epitaxial layer and Si substrate as well as for improving the structural and optical qualities of the GaN layer. We report on characterization of various thickness changes of GaN/Si(111) epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD). We have studied the effect of various thickness changes of GaN epitaxial layer from 0.5 to 1.2 μm, and, we have obtained a crack free GaN/Si(111) epitaxial layer with various thicknesses ranging from 0.5 to 1.0 μm and the best characteristics of the GaN epitaxial layer at 1.0 μm. Photoluminescence (PL) spectra at room temperature of the GaN/Si(111) epitaxial layer grown on the superlattice showed a sharp band edge emission peak at 366.2 nm with full width at half maximum (FWHM) of 63.9 meV. The average RMS by atomic force microscope (AFM) was 0.775 nm. FWHM of double-crystal X-ray diffractometer (DCXRD) rocking curve obtained for the (0002) diffraction was 886 arcsec. It was found that the characterization of the GaN/Si(111) with A l.2Ga 0.8N/GaN superlattice was still worse than that on GaN/sapphire, due to the existence of the intrinsic tensile stress caused by GaN grain boundaries.

AB - We have studied the growth of Al 0.2Ga 0.8N/GaN superlattices as an intermediate layer between GaN epitaxal layer and Si substrate in order to control the tensile stress induced by cooling after growth. This Al 0.2Ga 0.8N/GaN superlattice is used for avoiding the abrupt change in thermal expansion coefficient between the GaN epitaxial layer and Si substrate as well as for improving the structural and optical qualities of the GaN layer. We report on characterization of various thickness changes of GaN/Si(111) epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD). We have studied the effect of various thickness changes of GaN epitaxial layer from 0.5 to 1.2 μm, and, we have obtained a crack free GaN/Si(111) epitaxial layer with various thicknesses ranging from 0.5 to 1.0 μm and the best characteristics of the GaN epitaxial layer at 1.0 μm. Photoluminescence (PL) spectra at room temperature of the GaN/Si(111) epitaxial layer grown on the superlattice showed a sharp band edge emission peak at 366.2 nm with full width at half maximum (FWHM) of 63.9 meV. The average RMS by atomic force microscope (AFM) was 0.775 nm. FWHM of double-crystal X-ray diffractometer (DCXRD) rocking curve obtained for the (0002) diffraction was 886 arcsec. It was found that the characterization of the GaN/Si(111) with A l.2Ga 0.8N/GaN superlattice was still worse than that on GaN/sapphire, due to the existence of the intrinsic tensile stress caused by GaN grain boundaries.

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KW - MOCVD

KW - PL

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