Characterization of hexagonal defects in gallium nitride on sapphire

Ji Hyun Kim, K. H. Baik

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hexagonal pits on the surface of GaN grown by an HVPE technique were characterized by SEM, CL-imaging, and micro-Raman scattering techniques. From the CL-imaging, there was seen to be a bright ring around the hexagonal pits, thereby implying disuniformities in the crystal surrounding the hexagonal pits. Then, micro-Raman techniques were employed for detailed analysis both inside and outside the hexagonal pits. E2 2 phonons were monitored in order to characterize the strain. The film became more tensile by 0.13 GPa when the laser beam was scanned from the outside of the bright ring shown in the CL-imaging to the center of the hexagonal pit.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalJournal of Ceramic Processing Research
Volume8
Issue number4
Publication statusPublished - 2007 Oct 17

Fingerprint

Gallium nitride
Aluminum Oxide
Sapphire
Imaging techniques
Defects
Phonons
Laser beams
Raman scattering
Crystals
Scanning electron microscopy
gallium nitride

Keywords

  • Defects
  • Gallium nitride
  • SEM

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Characterization of hexagonal defects in gallium nitride on sapphire. / Kim, Ji Hyun; Baik, K. H.

In: Journal of Ceramic Processing Research, Vol. 8, No. 4, 17.10.2007, p. 277-280.

Research output: Contribution to journalArticle

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