Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

K. H. Kim; Y. H. Na; Y. J. Park; T. R. Jung; S. U. Kim; J. K. Hong

doi:10.1109/TNS.2004.839084

Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

K. H. Kim, Y. H. Na, Y. J. Park, T. R. Jung, S. U. Kim, J. K. Hong

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (E_v + 0.36 eV), and grain boundary defects (E_v + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

Original language	English
Pages (from-to)	3094-3097
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 I
DOIs	https://doi.org/10.1109/TNS.2004.839084
Publication status	Published - 2004 Dec

Keywords

CdZnTe
Charge collection efficiency
High resistivity
Polycrystalline
Thermal evaporation method
Time of flight (TOF)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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abstract = "The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.",

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AU - Kim, K. H.

AU - Na, Y. H.

AU - Park, Y. J.

AU - Jung, T. R.

AU - Kim, S. U.

AU - Hong, J. K.

PY - 2004/12

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N2 - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

AB - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

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KW - Charge collection efficiency

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KW - Polycrystalline

KW - Thermal evaporation method

KW - Time of flight (TOF)

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