Abstract
The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.
| Original language | English |
|---|---|
| Pages (from-to) | 3094-3097 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 51 |
| Issue number | 6 I |
| DOIs | |
| Publication status | Published - 2004 Dec 1 |
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Keywords
- CdZnTe
- Charge collection efficiency
- High resistivity
- Polycrystalline
- Thermal evaporation method
- Time of flight (TOF)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cite this
Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method. / Kim, Kihyun; Na, Y. H.; Park, Y. J.; Jung, T. R.; Kim, S. U.; Hong, J. K.
In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 I, 01.12.2004, p. 3094-3097.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method
AU - Kim, Kihyun
AU - Na, Y. H.
AU - Park, Y. J.
AU - Jung, T. R.
AU - Kim, S. U.
AU - Hong, J. K.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.
AB - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.
KW - CdZnTe
KW - Charge collection efficiency
KW - High resistivity
KW - Polycrystalline
KW - Thermal evaporation method
KW - Time of flight (TOF)
UR - http://www.scopus.com/inward/record.url?scp=11044238397&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11044238397&partnerID=8YFLogxK
U2 - 10.1109/TNS.2004.839084
DO - 10.1109/TNS.2004.839084
M3 - Article
AN - SCOPUS:11044238397
VL - 51
SP - 3094
EP - 3097
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6 I
ER -