Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

K. H. Kim, Y. H. Na, Y. J. Park, T. R. Jung, S. U. Kim, J. K. Hong

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

Original languageEnglish
Pages (from-to)3094-3097
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number6 I
Publication statusPublished - 2004 Dec


  • CdZnTe
  • Charge collection efficiency
  • High resistivity
  • Polycrystalline
  • Thermal evaporation method
  • Time of flight (TOF)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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