Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

Kihyun Kim, Y. H. Na, Y. J. Park, T. R. Jung, S. U. Kim, J. K. Hong

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

Original languageEnglish
Pages (from-to)3094-3097
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 I
DOIs
Publication statusPublished - 2004 Dec 1

Fingerprint

Thermal evaporation
Photocurrents
Thick films
Vacancies
thick films
Carrier concentration
Grain boundaries
Electric properties
evaporation
Defects
electrical resistivity
photocurrents
grain boundaries
trapping
electrical properties
life (durability)
Compensation and Redress
defects

Keywords

  • CdZnTe
  • Charge collection efficiency
  • High resistivity
  • Polycrystalline
  • Thermal evaporation method
  • Time of flight (TOF)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method. / Kim, Kihyun; Na, Y. H.; Park, Y. J.; Jung, T. R.; Kim, S. U.; Hong, J. K.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 I, 01.12.2004, p. 3094-3097.

Research output: Contribution to journalArticle

Kim, Kihyun ; Na, Y. H. ; Park, Y. J. ; Jung, T. R. ; Kim, S. U. ; Hong, J. K. / Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 6 I. pp. 3094-3097.
@article{26a10125cb9748e2bedf1a34300e26ad,
title = "Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method",
abstract = "The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.",
keywords = "CdZnTe, Charge collection efficiency, High resistivity, Polycrystalline, Thermal evaporation method, Time of flight (TOF)",
author = "Kihyun Kim and Na, {Y. H.} and Park, {Y. J.} and Jung, {T. R.} and Kim, {S. U.} and Hong, {J. K.}",
year = "2004",
month = "12",
day = "1",
doi = "10.1109/TNS.2004.839084",
language = "English",
volume = "51",
pages = "3094--3097",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 I",

}

TY - JOUR

T1 - Characterization of high-resistivity poly-CdZnTe thick films grown by thermal evaporation method

AU - Kim, Kihyun

AU - Na, Y. H.

AU - Park, Y. J.

AU - Jung, T. R.

AU - Kim, S. U.

AU - Hong, J. K.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

AB - The high-resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity were investigated using time of flight technique. We have measured the average drift mobility and mobility lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of time of flight based on multiple trapping model, we have found that the two dominant localized states which is considered to be related to the Cd vacancy (Ev + 0.36 eV), and grain boundary defects (Ev + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

KW - CdZnTe

KW - Charge collection efficiency

KW - High resistivity

KW - Polycrystalline

KW - Thermal evaporation method

KW - Time of flight (TOF)

UR - http://www.scopus.com/inward/record.url?scp=11044238397&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11044238397&partnerID=8YFLogxK

U2 - 10.1109/TNS.2004.839084

DO - 10.1109/TNS.2004.839084

M3 - Article

AN - SCOPUS:11044238397

VL - 51

SP - 3094

EP - 3097

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 I

ER -